power management solution featuring Siliup SP40P01GTO 40V P Channel Power MOSFET with low gate charge

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Product Description

Product Overview

The SP40P01GTO is a 40V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: SP40P01GTO
Package: TOLL

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS		-40			V
RDS(on)TYP		@-10V		1.3		m
RDS(on)TYP		@-4.5V		1.8		m
ID			-330			A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)	-40			V
Gate-Source Voltage	VGS	(Ta=25)		20		V
Continuous Drain Current	ID	(Tc=25)			-330	A
Continuous Drain Current	ID	(Tc=100)			-220	A
Pulsed Drain Current	IDM				-1320	A
Single Pulse Avalanche Energy	EAS				2350	mJ
Power Dissipation	PD	(Tc=25)			400	W
Thermal Resistance Junction-to-Case	RJC			0.31		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID= -250uA	-40	-47	-	V
Drain-Source Leakage Current	IDSS	VDS=-32V , VGS=0V , TJ=25	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID = -250uA	-1.0	-1.6	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID= -20A	-	1.3	1.7	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-20A	-	1.8	2.5	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-20V , VGS=0V , f=1MHz	-	15500	-	pF
Output Capacitance	Coss		-	3950	-	pF
Reverse Transfer Capacitance	Crss		-	95	-	pF
Total Gate Charge	Qg	VDS=-20V , VGS=10V , ID=-75A	-	228	-	nC
Gate-Source Charge	Qgs		-	49	-	nC
Gate-Drain Charge	Qg d		-	31	-	nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-20V , VGS=10V , RG=1.6,ID=-75A	-	39	-	nS
Rise Time	Tr		-	58	-	nS
Turn-Off Delay Time	Td(off)		-	152	-	nS
Fall Time	Tf		-	46	-	nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	-330	A
Reverse Recovery Time	Trr	IS=-20A, di/dt=100A/us, TJ=25	-	79	-	nS
Reverse Recovery Charge	Qrr		-	213	-	nC
Package Dimensions (TOLL)
Symbol	Dimensions In Millimeters	Min.	Nom.	Max.
A		2.20	2.30	2.40
b		0.65	0.75	0.85
C		0.508		REF
D		10.25	10.40	10.55
D1		2.85	3.00	3.15
E		9.75	9.90	10.05
E1		9.65	9.80	9.95
E2		8.95	9.10	9.25
E3		7.25	7.40	7.55
e			1.20	BSC
F		1.05	1.20	1.35
H		11.55	11.70	11.85
H1		6.03	6.18	6.33
H2		6.85	7.00	7.15
H3			3.00	BSC
L		1.55	1.70	1.85
L1		0.55	0.7	0.85
L2		0.45	0.6	0.75
M			0.08	REF.
		8	10	12
K		4.25	4.40	4.55