Dual P Channel MOSFET 20V 2KV ESD Protection Siliup SP2004KDTL for Battery Switch and DC DC Converter
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP2004KDTL is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package, with ESD protection up to 2KV. This MOSFET is designed for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP2004KDTL
- Package: SOT-563
- Circuit Diagram Marking: 04K
- ESD Protected: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @-4.5V | 400 | 550 | m | ||
| ID | -0.7 | A | ||||
| RDS(on) | @-2.5V | 550 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -0.7 | A | |||
| Pulse Drain Current | IDM | Tested | -2.8 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 | -0.65 | -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 400 | 550 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-200mA | 550 | 700 | m | |
| Input Capacitance | Ciss | VDS=-16V , VGS=0V , f=1MHz | 113 | pF | ||
| Output Capacitance | Coss | 15 | pF | |||
| Reverse Transfer Capacitance | Crss | 9 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-300mA | 1.9 | nC | ||
| Gate-Source Charge | Qgs | 0.4 | ||||
| Gate-Drain Charge | Qg | 0.31 | ||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA | 9 | nS | ||
| Turn-On Rise Time | tr | 5.7 | ||||
| Turn-Off Delay Time | td(off) | 32.6 | ||||
| Turn-Off Fall Time | tf | 20.3 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| SOT-563 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.525 | 0.600 | ||||
| A1 | 0.000 | 0.050 | ||||
| e | 0.450 | 0.550 | ||||
| c | 0.090 | 0.160 | ||||
| D | 1.500 | 1.700 | ||||
| b | 0.170 | 0.270 | ||||
| E1 | 1.100 | 1.300 | ||||
| E | 1.500 | 1.700 | ||||
| L | 0.100 | 0.300 | ||||
| L1 | 0.200 | 0.400 | ||||
| 7Ref. | ||||||
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