High reliability p channel mosfet Siliup SP60P25TQ with low gate charge and 60v drain source voltage

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP60P25TQ is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on). The device is 100% tested for single pulse avalanche energy and is available in a TO-220-3L package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP60P25TQ
Package: TO-220-3L (1:G 2:D 3:S)
Marking: 60P25

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
V(BR)DSS					-60	V
RDS(on)TYP		@10V		25		m
RDS(on)TYP		@4.5V		30		m
ID				-45		A
Absolute Maximum Ratings
Drain-Source Voltage	VDS				-60	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current (Tc=25)	ID				-45	A
Continuous Drain Current (Tc=100)	ID				-30	A
Pulsed Drain Current	IDM				-180	A
Single Pulse Avalanche Energy	EAS			225		mJ
Power Dissipation (Tc=25)	PD				70	W
Thermal Resistance Junction-to-Case	RJC			1.78		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-60			V
Drain Cut-Off Current	IDSS	VDS=-48V , VGS=0V , TJ=25			-1	A
Gate Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-1.0		-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-5A		25	35	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-4A		30	42	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-30V,VGS=0V,f=1MHz		2417		pF
Output Capacitance	Coss			179		pF
Reverse Transfer Capacitance	Crss			120		pF
Total Gate Charge	Qg	VDS=-30V,VGS=-10V,ID=-6A		46.5		nC
Gate-Source Charge	Qgs			9.1
Gate-Drain Charge	Qg d			9.2
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-30V,VGS=-10V,ID=-20A,RG=3		9.8		nS
Rise Time	tr			6.1
Turn-Off Delay Time	td(off)			44
Fall Time	tf			12.7
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS = -1A, VGS = 0V			-1.2	V
Maximum Body-Diode Continuous Current	IS				-45	A
Reverse Recovery Time	Trr	IS=-20A, di/dt=-100A/us, Tj=25		25		nS
Reverse Recovery Charge	Qrr			55		nC

Package Information (TO-220-3L)

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.400	4.600	0.173	0.181
A1	2.250	2.550	0.089	0.100
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.330	0.650	0.013	0.026
c1	1.200	1.400	0.047	0.055
D	9.910	10.250	0.390	0.404
E	8.950	9.750	0.352	0.384
E1	12.650	13.050	0.498	0.514
e	2.540 TYP.		0.100 TYP.
e1	4.980	5.180	0.196	0.204
F	2.650	2.950	0.104	0.116
H	7.900	8.100	0.311	0.319
h	0.000	0.300	0.000	0.012
L	12.900	13.400	0.508	0.528
L1	2.850	3.250	0.112	0.128
V	6.900 REF.		0.276 REF.
	3.400	3.800	0.134	0.150