40V P Channel MOSFET Siliup SP40P04TG with Low Gate Charge and High Reliability in TO220F Package
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Product Description
Product Overview
The SP40P04TG is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. The device comes in a TO-220F package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P04TG
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -40 | V | ||||
| RDS(on) | @10V | 4.8 | 6 | m | ||
| RDS(on) | @4.5V | 6.5 | 8.6 | m | ||
| ID | -100 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -100 | A | |||
| Continuous Drain Current (Tc=100) | ID | -67 | A | |||
| Pulsed Drain Current | IDM | -400 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 576 | mJ | |||
| Power Dissipation (Tc=25) | PD | 150 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.83 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | ||
| Drain Cut-Off Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 4.8 | 6 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-20A | 6.5 | 8.6 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V,VGS=0V,f=1MHz | 6456 | pF | ||
| Output Capacitance | Coss | 508 | ||||
| Reverse Transfer Capacitance | Crss | 441 | ||||
| Total Gate Charge | Qg | VDS=-20V,VGS=-10V,ID=-20A | 74 | nC | ||
| Gate-Source Charge | Qgs | 22 | ||||
| Gate-Drain Charge | Qgd | 18 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-20V,ID=-20A,VGS=-10V,RG=2.4 | 10 | nS | ||
| Rise Time | tr | 15 | ||||
| Turn-Off Delay Time | td(off) | 93 | ||||
| Fall Time | tf | 20 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -100 | A | |||
| Reverse Recovery Time | trr | IS=-20A,di/dt=100A/us,TJ=25 | 30 | nS | ||
| Reverse Recovery Charge | Qrr | 21 | nC | |||
Note: 1. The test condition is VDD=-25V, VGS=-10V, L=0.5mH, RG=25
TO-220F Package Information (Dimensions in Millimeters)
| Symbol | Dimensions | Min. | Max. | Unit |
|---|---|---|---|---|
| A | 4.300 | 4.700 | ||
| A1 | 1.300 | REF. | ||
| A2 | 2.800 | 3.200 | ||
| A3 | 2.500 | 2.900 | ||
| b | 0.500 | 0.750 | ||
| b1 | 1.100 | 1.350 | ||
| b2 | 1.500 | 1.750 | ||
| c | 0.500 | 0.750 | ||
| D | 9.960 | 10.360 | ||
| E | 14.800 | 15.200 | ||
| e | 2.540 | TYP. | ||
| F | 2.700 | REF. | ||
| 3.500 | REF. | |||
| h | 0.000 | 0.300 | ||
| h1 | 0.800 | REF. | ||
| h2 | 0.500 | REF. | ||
| L | 28.000 | 28.400 | ||
| L1 | 1.700 | 1.900 | ||
| L2 | 0.900 | 1.100 |
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