Durable Siliup SP40N08TH 40V N Channel MOSFET designed for DC DC converters and load switching tasks

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Product Description

Product Overview

The SP40N08TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Engineered for efficient power management, it features fast switching, low gate charge, and low RDS(on) at various gate drive voltages (8m at 10V and 11m at 4.5V). This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching.

Product Attributes

Brand: Siliup Semiconductor Technology Co., Ltd.
Product Code: SP40N08TH
Device Code: 40N08
Channel Type: N-Channel
Package: TO-252
Website: www.siliup.com

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			40		V
RDS(on) Typ.	RDS(on)	@10V		8	12	m
RDS(on) Typ.	RDS(on)	@4.5V		11	18	m
Continuous Drain Current	ID			55		A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				40	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID	(TC=25)			55	A
Continuous Drain Current	ID	(TC=100)			37	A
Pulsed Drain Current	IDM				220	A
Single Pulse Avalanche Energy	EAS				51	mJ
Power Dissipation	PD	(TC=25)			50	W
Thermal Resistance Junction-to-Case	RJC				2.5	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	40	-	-	V
Drain-Source Leakage Current	IDSS	VDS=32V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=12A	-	8	12	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=6A	-	11	18	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=20V , VGS=0V , f=1MHz	-	1785	-	pF
Output Capacitance	Coss		-	210	-	pF
Reverse Transfer Capacitance	Crss		-	158	-	pF
Total Gate Charge	Qg	VDS=20V , VGS=10V , ID=10A	-	31	-	nC
Gate-Source Charge	Qgs		-	4	-	nC
Gate-Drain Charge	Qgd		-	11	-	nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=20V ,VGS=10V , RG=3, ID=10A	-	6	-	nS
Rise Time	Tr		-	16	-	nS
Turn-Off Delay Time	Td(off)		-	31	-	nS
Fall Time	Tf		-	15	-	nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	55	A
Reverse Recovery Time	Trr	IS=10A, di/dt=100A/us, TJ=25	-	31	-	nS
Reverse Recovery Charge	Qrr		-	23	-	nC

Package Information (TO-252)

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830 REF.	0.190 REF.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900 REF.	0.114 REF.
L2	1.400	1.700	0.055	0.067
L3	1.600 REF.	0.063 REF.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350 REF.	0.211 REF.