N Channel Power MOSFET Slkor SL3400 with Low On State Resistance and High Current Handling Capability
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SL3400 is an N-Channel Power MOSFET designed for high power and current handling capabilities. It features low on-state resistance (RDS(ON)) at various gate-source voltages, making it suitable for efficient power management and switching applications. This lead-free product is available in a surface-mount SOT-23 package.
Product Attributes
- Brand: SLKORMicro
- Product Type: N-Channel Power MOSFET
- Certifications: Lead free product is acquired
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| RDS(ON) @ VGS=2.5V | RDS(ON) | ID=4A | 4 | 59 | m | |
| RDS(ON) @ VGS=4.5V | RDS(ON) | ID=5.8A | 45 | m | ||
| RDS(ON) @ VGS=10V | RDS(ON) | ID=5.8A | 41 | m | ||
| High power and current handing capability | ||||||
| Lead free product is acquired | ||||||
| Surface mount package | ||||||
| PWM applications | ||||||
| Load switch | ||||||
| Power management | ||||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | 30 | V | ||
| Gate-Source Voltage | VGS | TA=25 | 12 | V | ||
| Continuous Drain Current | ID | TA=25 | 5.8 | A | ||
| Pulsed Drain Current | IDM | Note 1 | 30 | A | ||
| Maximum Power Dissipation | PD | TA=25 | 1.4 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | Note 2 | 89 | /W | ||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | 33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.7 | 1.4 | - | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=4A | - | 4 | 59 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=5.8A | - | 45 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5.8A | - | 41 | m | |
| Forward Transconductance | gFS | VDS=5V,ID=5.8A | 10 | - | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | - | 820 | - | PF | |
| Output Capacitance | Coss | - | 99 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, F=1.0MHz | - | 77 | - | PF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | - | 9.6 | - | nS | |
| Turn-on Rise Time | tr | - | 4.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 39 | - | nS | |
| Turn-Off Fall Time | tf | VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 4 | - | nS |
| Total Gate Charge | Qg | - | 9.5 | - | nC | |
| Gate-Source Charge | Qgs | - | 1.5 | - | nC | |
| Gate-Drain Charge | Qg | VDS=15V,ID=5.8A, VGS=4.5V | - | 3 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=5.8A | - | - | 1.2 | V |
| Diode Forward Current | IS | Note 2 | - | - | 5.8 | A |
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