High current P Channel MOSFET SLkor SL0D30AP with fully characterized avalanche voltage and current

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Product Description

Product Overview

The SL0D3AP is a high-density P-Channel MOSFET designed for ultra-low RDS(ON). It features fully characterized avalanche voltage and current, offering good stability and uniformity with high EAS. This MOSFET is ideal for battery and loading switching applications and comes in an excellent package for good heat dissipation.

Product Attributes

Brand: SLKORMicro
Model: SL0D3AP
Package: PDFN3X3-8L

Technical Specifications

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Absolute Maximum Ratings	VDS				-30	V
	VGS			±20		V
	EAS	Single pulse avalanche energy			77	mJ
	TJ,TSTG	Storage Temperature Range		-55		175	C
	ID	Diode Continuous Forward Current (Tc=25C, Mounted on Large Heat Sink)			-30	A
Common Ratings	IDM	Pulse Drain Current (Tc=25C)			-150	A
	ID	Tested Continuous Drain Current (Tc=25C)			-30	A
	PD	Maximum Power Dissipation (TA=25)				2	W
Electrical Characteristics	BV(BR)DSS	Drain-Source Breakdown Voltage (VGS=0V, ID=-250A)	-30			V
	IDSS	Zero Gate Voltage Drain Current (VDS=-30V, VGS=0V)			-1	A
	IGSS	Gate-Body Leakage Current (VGS=±20V, VDS=0V)			±100	nA
	VGS(th)	Gate Threshold Voltage (VDS=VGS, ID=-250A)	-1	-1.5	-2.2	V
	RDS(on)	Drain-Source On-State Resistance (VGS=-10V, ID=-10A)		15	22	m
	RDS(on)	(VGS=-4.5V, ID=-8A)		21	30	m
	CISS	Input Capacitance (VDS=-15V, VGS=0V, f=1MHz)		1500		pF
	Coss	Output Capacitance (VDS=-15V, VGS=0V, f=1MHz)		327		pF
	Crss	Reverse Transfer Capacitance (VDS=-15V, VGS=0V, f=1MHz)		276		pF
	Qg	Total Gate Charge (VDS=-15V, ID=-9.1A, VGS=-10V)		30		nC
	Qgs	Gate Source Charge (VDS=-15V, ID=-9.1A, VGS=-10V)		5.3		nC
	Qgd	Gate Drain Charge (VDS=-15V, ID=-9.1A, VGS=-10V)		7.6		nC
Switching Characteristics	td(on)	Turn-on Delay Time		14		nS
	tr	Turn-on Rise Time		20		nS
	td(off)	Turn-Off Delay Time		95		nS
	tf	Turn-Off Fall Time		65		nS
Source-Drain Diode Characteristics	VSD	Forward On Voltage (Tj=25, Is=-15A)			-1.2	V