30V Uni N Channel MOSFET SP30N10T1 with Low On Resistance and Continuous Drain Current of 8 Amperes
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Product Description
Product Overview
The SP30N10T1 is a 30V Uni N-Channel MOSFET designed for high-performance applications. It features a low on-resistance (RDS(on)) of typically 10m at 10V VGS and 14m at 4.5V VGS, along with low input capacitance and fast switching speeds. This MOSFET is suitable for various electronic circuits requiring efficient power handling.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N10T1
- Marking: 30N10
- Type: Uni N-Channel MOSFET
- Package: SOT-23-3L
- Version: Ver-1.0
- Date: 2021/09
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 10 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @4.5V | 14 | m | ||
| Continuous Drain Current | ID | 8 | A | |||
| Features | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Continuous Drain Current | ID | 8 | A | |||
| On-Resistance | RDS(ON) | @ VGS =10V | < 15 | m | ||
| On-Resistance | RDS(ON) | @ VGS =4.5V | < 22 | m | ||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Drain Current-Continuous | ID | 8 | A | |||
| Pulsed Drain Current | IDM | 32 | A | |||
| Maximum Power Dissipation | PD | (Tc=25) | 1.4 | W | ||
| Thermal Resistance, Junction-to-Case | RJc | 90 | /W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.5 | 2.2 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A | 10 | 15 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=4A | 14 | 22 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHz | 1317 | pF | ||
| Output Capacitance | Coss | 163 | pF | |||
| Reverse Transfer Capacitance | Crss | 131 | pF | |||
| Turn-on Delay Time | td(on) | VGS=10V, VDS=15V, ID=10A,RGEN=3.3 | 6.2 | nS | ||
| Turn-on Rise Time | tr | 59 | nS | |||
| Turn-Off Delay Time | td(off) | 27.6 | nS | |||
| Turn-Off Fall Time | tf | 8.4 | nS | |||
| Total Gate Charge | Qg | VGS=10V, VDS=25V, ID=12A | 12.6 | nC | ||
| Gate-Source Charge | Qgs | 4.2 | nC | |||
| Gate-Drain Charge | Qgd | 5.1 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=1A | 1.2 | V | ||
| Package Information (Dimensions in millimeters) | ||||||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E1 | 1.500 | 1.700 | ||||
| E | 2.650 | 2.950 | ||||
| e | 0.950 | Typ. | ||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
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