Durable Power MOSFET Slkor SL11N65CF1 Offering 11A Continuous Current and Avalanche Energy Handling

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This Power MOSFET utilizes Slkor's Advanced Super-Junction technology, engineered to minimize conduction losses, enhance switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideally suited for high-efficiency AC/DC power conversion in switching mode operations.

Product Attributes

Brand: Slkor
Technology: Advanced Super-Junction
Testing: 100% avalanche tested

Technical Specifications

Model	Parameter	Test Conditions	Min	Typ	Max	Units
SL11N65CF1	Drain-Source Voltage (VDSS)		650			V
	Drain Current - Continuous (ID) @ TC = 25				11	A
	Drain Current - Continuous (ID) @ TC = 100				7	A
	Drain Current - Pulsed (IDM)	(Note 1)			33	A
	Gate-Source Voltage (VGSS)				30	V
	Single Pulsed Avalanche Energy (EAS)	(Note 2)			483	mJ
	Avalanche Current (IAR)	(Note 1)			11	A
	Repetitive Avalanche Energy (EAR)				6.25	mJ
	Peak Diode Recovery dv/dt	(Note 3)			20	V/ns
	MOSFET dv/dt				100
	Power Dissipation (PD) @ TC = 25				28	W
	Operating and Storage Temperature Range (TJ, TSTG)		-55		+150
	Thermal Resistance, Junction-to-Case (RJC)				4.5	/W
SL11N65CF1	Drain-Source Breakdown Voltage (BVDSS)	VGS = 0 V, ID = 1 mA	650			V
	Zero Gate Voltage Drain Current (IDSS)	VDS = 600 V, VGS = 0 V			1	uA
	Gate-Body Leakage Current, Forward (IGSSF)	VGS = 30 V, VDS = 0 V			100	nA
	Gate-Body Leakage Current, Reverse (IGSSR)	VGS = -30 V, VDS = 0 V			-100	nA
	Gate Threshold Voltage (VGS(th))	VDS = VGS, ID = 0.8mA	2.5		4.5	V
	Static Drain-Source On-Resistance (RDS(on))	VGS = 10 V, ID = 4.0 A		318	380	m
	Input Capacitance (Ciss)	VDS = 400 V, VGS = 0 V, f = 250 KHz			628	pF
	Output Capacitance (Coss)				20	pF
	Turn-On Delay Time (td(on))	VDD = 400 V, ID = 4.0A, RG = 10 (Note 4, 5)		8		ns
	Total Gate Charge (Qg)	VDS =400 V, ID = 4.0A, VGS = 10 V (Note 4, 5)		15.5		nC