P Channel MOSFET 30V SOT 23 Package Siliup SP3407T2 Optimized for Battery Switch and DC DC Converter

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Product Description

Product Overview

The SP3407T2 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers robust performance with key electrical characteristics optimized for efficient operation.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Package: SOT-23
Device Code: 3407

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-30	V
RDS(on) Typ.	RDS(on)	@ -10V		45		m
RDS(on) Typ.	RDS(on)	@ -4.5V		65		m
Continuous Drain Current	ID				-4.1	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				-30	V
Gate-Source Voltage	VGSS				20	V
Continuous Drain Current	ID				-4.1	A
Pulse Drain Current	IDM	Tested			-16.4	A
Power Dissipation	PD				1.3	W
Thermal Resistance Junction-to-Ambient	RJA				96	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-30		-	V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-1	-1.6	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID =-4.1A	-	45	56	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID =-3A	-	65	87	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz	-	501	-	pF
Output Capacitance	Coss		-	72	-
Reverse Transfer Capacitance	Crss		-	57	-
Total Gate Charge	Qg	VDS=-15V , VGS=-10V , ID=-5A	-	9	-	nC
Gate-Source Charge	Qgs		-	1.5	-
Gate-Drain Charge	Qg d		-	2.3	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-15V VGS=-10V , RG=3 , ID=-1A	-	8.6	-	nS
Turn-On Rise Time	tr		-	5.0	-
Turn-Off Delay Time	td(off)		-	28.2	-
Turn-Off Fall Time	tf		-	13.5	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-	-1.2	V
Package Information: SOT-23
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e	REF.	0.95
e1		1.80	2.00
L	REF.	0.55
L1		0.30	0.50
		0	8