Power Switching N Channel MOSFET Featuring Low Gate Charge and 100V Rating Siliup SP010N15GNK Device
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP010N15GNK is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, battery management, and uninterruptible power supplies. This device is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N15GNK
- Technology: N-Channel Power MOSFET
- Package: PDFN5X6-8L
- Marking: 010N15G
Technical Specifications
| Product Summary | Value | |
| V(BR)DSS | 100V | |
| RDS(on) TYP (@10V) | 15m | |
| RDS(on) TYP (@4.5V) | 18m | |
| ID | 40A | |
| EAS | 132mJ (Single Pulse Avalanche Energy) | |
| PD (@Tc=25) | 55W | |
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current (Tc=25) | ID | 40 | A |
| Continuous Drain Current (Tc=100) | ID | 27 | A |
| Pulsed Drain Current | IDM | 160 | A |
| Single Pulse Avalanche Energy | EAS | 132 | mJ |
| Power Dissipation (Tc=25) | PD | 55 | W |
| Thermal Resistance Junction-to-Case | RJC | 2.27 | /W |
| Storage Temperature Range | TSTG | -55 to 150 | |
| Operating Junction Temperature Range | TJ | -55 to 150 |
| Characteristics | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 15 | 19 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | - | 18 | 24 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1069 | - | pF |
| Output Capacitance | Coss | - | - | 356 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 17 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | - | 5 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 2.7 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 50V, VDS =50V, ID=50A RG = 2.2 | - | 38 | - | nS |
| Rise Time | tr | - | - | 12 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 51 | - | nS |
| Fall Time | tf | - | - | 17 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 40 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 40 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 42 | - | nC |
| Package Information | Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|---|
| Min. | Max. | Min. | Max. | ||
| A | 0.900 | 1.000 | 0.035 | 0.039 | |
| A3 | 0.254REF. | 0.010REF. | |||
| D | 4.944 | 5.096 | 0.195 | 0.201 | |
| E | 5.974 | 6.126 | 0.235 | 0.241 | |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | |
| k | 1.190 | 1.390 | 0.047 | 0.055 | |
| b | 0.350 | 0.450 | 0.014 | 0.018 | |
| e | 1.270TYP. | 0.050TYP. | |||
| L | 0.559 | 0.711 | 0.022 | 0.028 | |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | |
| H | 0.574 | 0.726 | 0.023 | 0.029 | |
| 10 | 12 | 10 | 12 |
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