Complementary MOSFET 40V Device Siliup SP4013CNK Suitable for High Density Cell and Power Management
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP4013CNK is a 40V Complementary MOSFET designed for high-density cell applications, offering ultra-low RDS(on). This device is fully characterized for avalanche voltage and current, and features fast switching speeds. It is suitable for load switching, inverters, and power management applications.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4013CNK
- Package: PDFNWB5X6-8L
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | -40 | V | ||
| Gate-Source Voltage: VGS 20 20 V | ||||||
| Continuous Drain Current (TC=25) | ID | VGS=10V | 25 | VGS=-10V | -18 | A |
| VGS=4.5V | - | VGS=-4.5V | - | A | ||
| Pulsed Drain Current | IDM | 100 | -72 | A | ||
| Maximum Power Dissipation (TC=25) | PD | 30 | W | |||
| Thermal Resistance Junction to Case | RJC | 4.16 | /W | |||
| Operating & Storage Temperature Range | TJ, TSTG | -55 To 150 | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | VGS=0V , ID=-250uA | -40 | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | 1 | VDS=-32V , VGS=0V , TJ=25 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 to 2.5 | VGS=VDS , ID =-250uA | -1 to -2.5 | V |
| Drain-source on-resistance | RDS(ON) | VGS=10V , ID=10A | 15 to 19 | VGS=-10V , ID=-5A | 32 to 45 | m |
| VGS=4.5V , ID=8A | 18 to 25 | VGS=-4.5V , ID=-3A | 45 to 60 | m | ||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 1061 | VDS=-15V , VGS=0V , f=1MHz | 964 | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz 110 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz 95 (N-Ch) / 80 (P-Ch) | pF | |||
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=10A | 23 | VDS=-15V , VGS=-10V , ID=-10A | 21 | nC |
| Gate-Source Charge | Qgs | 23 (N-Ch) / 21 (P-Ch) | nC | |||
| Gate-Drain Charge | Qgd | 3.3 (N-Ch) / 3.5 (P-Ch) | nC | |||
| Switching Characteristics | Td(on) | VDD=15V , VGS=10V , RG=3.3 ID=6A | 5.5 | VDD=-15V , VGS=-10V , RG=3.3 ID=-6A | 5.1 | ns |
| Tr | VDD=15V , VGS=10V , RG=3.3 ID=6A | 14 | VDD=-15V , VGS=-10V , RG=3.3 ID=-6A | 15 | ns | |
| Switching Characteristics | Td(off) | VDD=15V , VGS=10V , RG=3.3 ID=6A | 25 | VDD=-15V , VGS=-10V , RG=3.3 ID=-6A | 23 | ns |
| Tf | VDD=15V , VGS=10V , RG=3.3 ID=6A | 12 | VDD=-15V , VGS=-10V , RG=3.3 ID=-6A | 11 | ns | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
Package Information (PDFNWB5x6-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | |||
|---|---|---|---|---|---|
| Min. | Max. | Min. | Max. | ||
| A | 0.900 | 1.000 | 0.035 | 0.039 | |
| A3 | 0.254 REF. | 0.010 REF. | |||
| D | 4.944 | 5.096 | 0.195 | 0.201 | |
| E | 5.974 | 6.126 | 0.235 | 0.241 | |
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | |
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | |
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | |
| k | 1.190 | 1.390 | 0.047 | 0.055 | |
| b | 0.350 | 0.450 | 0.014 | 0.018 | |
| e | 1.270 TYP. | 0.050 TYP. | |||
| L | 0.559 | 0.711 | 0.022 | 0.028 | |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | |
| H | 0.574 | 0.726 | 0.023 | 0.029 | |
| 10 to 12 | |||||
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