60V N Channel MOSFET Siliup SP60N01BGHTO Featuring Split Gate Trench Technology for Power Conversion

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP60N01BGHTO is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and power management systems.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP60N01BGHTO
Technology: Advanced Split Gate Trench Technology
Channel Type: N-Channel
Package: TOLL

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS			60		V
RDS(on)	RDS(on)TYP	@10V		1.3		m
Continuous Drain Current	ID			330		A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25 unless otherwise noted)			60	V
Gate-Source Voltage	VGS	(Ta=25 unless otherwise noted)		20		V
Continuous Drain Current	ID	(Tc=25)			330	A
Continuous Drain Current	ID	(Tc=100)			220	A
Pulsed Drain Current	IDM				1320	A
Single Pulse Avalanche Energy	EAS				1892	mJ
Power Dissipation	PD	(Tc=25)			355	W
Thermal Resistance Junction-to-Case	RJC				0.35	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	60	65	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=30A	-	1.3	1.5	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=25V , VGS=0V , f=1MHz	-	7397	-	pF
Output Capacitance	Coss		-	3885	-	pF
Reverse Transfer Capacitance	Crss		-	32	-	pF
Total Gate Charge	Qg	VDS=48V , VGS=10V , ID=30A	-	105	-	nC
Gate-Source Charge	Qgs		-	20	-	nC
Gate-Drain Charge	Qg		-	18	-	nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=48V , VGS=10V , RG=2, ID=30A	-	32.3	-	nS
Rise Time	Tr		-	52.1	-	nS
Turn-Off Delay Time	Td(off)		-	91	-	nS
Fall Time	Tf		-	27.8	-	nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	330	A
Reverse Recovery Time	Trr	IS=150A, di/dt=100A/us, TJ=25	-	69	-	nS
Reverse Recovery Charge	Qrr		-	121	-	nC
Package Information (TOLL)
Symbol	Dimensions (mm)	Min.	Nom.	Max.
A		2.20	2.30	2.40
b		0.65	0.75	0.85
C		0.508
D		10.25	10.40	10.55
D1		2.85	3.00	3.15
E		9.75	9.90	10.05
E1		9.65	9.80	9.95
E2		8.95	9.10	9.25
E3		7.25	7.40	7.55
e			1.20 BSC
F		1.05	1.20	1.35
H		11.55	11.70	11.85
H1		6.03	6.18	6.33
H2		6.85	7.00	7.15
H3			3.00 BSC
L		1.55	1.70	1.85
L1		0.55	0.7	0.85
L2		0.45	0.6	0.75
M			0.08 REF.
		8	10	12
K		4.25	4.40	4.55