High current MOSFET Slkor SL120N03D featuring trench technology for power management and switching

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Product Description

Product Overview

This Power MOSFET utilizes advanced TRENCH technology, engineered to minimize conduction losses, deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideal for applications requiring efficient power management, such as PWM applications and load switching.

Product Attributes

Brand: SLKORMicro
Model: SL120N03D
Technology: TRENCH

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Absolute Maximum Ratings
Drain-source Voltage	VDS	30	V
Gate-source Voltage	VGS	±20	V
Continuous Drain Current	ID	120	A	TC=25
Continuous Drain Current	ID	78	A	TC=100
Pulsed Drain Current	IDM	480	A	(TC=25,Tp Limited By Tjmax) (note1)
Maximum Power Dissipation	PD	88	W	(TC=25)
Avalanche energy, single Pulse	EAS	342	mJ	(L=0.5mH) (note2)
Operating Junction And Storage Temperature	Tj,Tstg	-55 To 150
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	TL	300
Junction-to-Case Thermal Resistance	RJC	1.4	/W	Max
Electrical Characteristics (TC=25 unless otherwise noted)
Drain-source breakdown voltage	BVDSS	30	V	VGS=0V, ID=250A
Zero gate voltage drain current	IDSS	1	A	VDS=30V, VGS=0V
Gate-source leakage current	IGSS	±100	nA	VGS=±20V, VDS=0V
Gate threshold voltage	VGS(th)	1.0-2.2	V	VDS=VGS, ID=250A (Min. Typ. Max.)
Drain-source on-state resistance	RDS(on)	2.6	m	VGS=10V, ID=20A (Typ.)
Drain-source on-state resistance	RDS(on)	3.6	m	VGS=4.5V, ID=15A (Typ.)
Input Capacitance	Ciss	4000	PF	VGS=0V, VDS=15V, f=1.0MHz (Typ.)
Output Capacitance	Coss	437	PF	VGS=0V, VDS=15V, f=1.0MHz (Typ.)
Reverse Transfer Capacitance	Crss	396	PF	VGS=0V, VDS=15V, f=1.0MHz (Typ.)
Turn-on delay time	td(on)	14	nS	VDS=15V, ID=30A, VGS=10V RL=3, Tj=25 (Typ.)
Turn-on Rise time	tr	18	nS	VDS=15V, ID=30A, VGS=10V RL=3, Tj=25 (Typ.)
Turn-off delay time	td(off)	40	nS	VDS=15V, ID=30A, VGS=10V RL=3, Tj=25 (Typ.)
Turn-off Fall time	tf	12	nS	VDS=15V, ID=30A, VGS=10V RL=3, Tj=25 (Typ.)
Gate Total Charge	QG	72	nC	VGS=10V, VDS=15V, ID=30A (Typ.)
Gate-Source Charge	QgS	46	nC	VGS=10V, VDS=15V, ID=30A (Typ.)
Gate-Drain Charge	QgD	13	nC	VGS=10V, VDS=15V, ID=30A (Typ.)
Body Diode Forward Voltage	VSD	1.2	V	VGS=0V, ISD=30A, TJ=25 (Typ.)
Body Diode Forward Current	Is	120	A
Body Diode Reverse Recovery Time	Trr	48	ns	TJ=25, ISD=30A, VGS=0V, di/dt =100A/s (Typ.)
Body Diode Reverse Recovery Charge	Qrr	80	nC	TJ=25, ISD=30A, VGS=0V, di/dt =100A/s (Typ.)