Trench Technology MOSFET Siliup SP2024KCTW Ideal for Power Switching and Driver Circuit Applications
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Product Description
Product Overview
The SP2024KCTW is a 20V N- and P-Channel complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It features trench technology and a supper high-density cell design for extremely low Rds(on) and exceptional ON resistance with maximum DC current capability. The device is ESD protected (HBM 2KV). It is suitable for applications such as driver circuits for relays, solenoids, lamps, hammers, power supply converters, and load/power switching for potable devices.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2024KCTW
- Technology: Trench Technology
- Package: SOT-363
- ESD Protection: HBM 2KV
Technical Specifications
| Parameter | Symbol | N-Channel (Q1) Value | P-Channel (Q2) Value | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 20V | -20V | |
| RDS(on)MAX @ 4.5V (N-Ch) / -4.5V (P-Ch) | RDS(on)MAX | 380m | 520m | @4.5V / -4.5V |
| RDS(on)MAX @ 2.5V (N-Ch) / -2.5V (P-Ch) | RDS(on)MAX | 450m | 700m | @2.5V / -2.5V |
| Continuous Drain Current | ID | 0.75A | -0.66A | |
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||
| Power Dissipation | PD | 0.15 | W | |
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~ +150 | ||
| Maximum Ratings - N-Channel Q1 (Ta=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | 0.75 | A | |
| Maximum Ratings - P-Channel Q2 (Ta=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | -20 | V | |
| Gate-Source Voltage | VGS | 10 | V | |
| Continuous Drain Current | ID | -0.66 | A | |
| Electrical Characteristics - N-Channel Q1 (TA=25 oC, unless otherwise noted) | ||||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | |
| Zero gate voltage drain current | IDSS | 1 | A | |
| Gate-body leakage current | IGSS | 10 | uA | |
| Gate threshold voltage | VGS(th) | 0.35 - 0.65 | V | |
| Drain-source on-resistance | RDS(on) | 0.25 - 0.38 | ||
| Drain-source on-resistance | RDS(on) | 0.35 - 0.45 | V | |
| Input Capacitance | Ciss | 79 - 120 | pF | |
| Output Capacitance | Coss | 13 - 20 | pF | |
| Reverse Transfer Capacitance | Crss | 9 - 15 | pF | |
| Turn-on delay time | td(on) | 6.7 | ns | |
| Turn-on rise time | tr | 4.8 | ns | |
| Turn-off delay time | td(off) | 17.3 | ns | |
| Turn-off fall time | tf | 7.4 | ns | |
| Body Diode Voltage | VSD | 0.7 - 1.3 | V | |
| Electrical Characteristics - P-Channel Q2 (TA=25 oC, unless otherwise noted) | ||||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | |
| Zero gate voltage drain current | IDSS | -1 | A | |
| Gate-body leakage current | IGSS | 10 | A | |
| Gate threshold voltage | VGS(th) | -0.35 - -1.0 | V | |
| Drain-source on-resistance | RDS(on) | 0.43 - 0.52 | ||
| Drain-source on-resistance | RDS(on) | 0.62 - 0.7 | V | |
| Input Capacitance | Ciss | 113 | pF | |
| Output Capacitance | Coss | 15 | pF | |
| Reverse Transfer Capacitance | Crss | 9 | pF | |
| Turn-on delay time | td(on) | 9 | ns | |
| Turn-on rise time | tr | 5.7 | ns | |
| Turn-off delay time | td(off) | 32.6 | ns | |
| Turn-off fall time | tf | 20.3 | ns | |
| Diode Forward voltage | VSD | -1.2 | V | |
| SOT-363 Package Information (Dimensions in Millimeters) | ||||
| Dimension A | 0.90 - 1.00 | |||
| Dimension A1 | 0.00 - 0.10 | |||
| Dimension B | 0.10 - 0.30 | |||
| Dimension b1 | 1.30 | |||
| Dimension D | 1.80 - 2.20 | |||
| Dimension E | 2.00 - 2.20 | |||
| Dimension E1 | 1.15 - 1.35 | |||
| Dimension e (Typ.) | 0.65 | |||
| Dimension L | 0.10 - 0.25 | |||
| Dimension L1 | 0.15 - 0.4 | |||
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