Power MOSFET Siliup SP85N05AGHNK N Channel 85V Device with Low RDSon and Compact PDFN5X6 8L Package
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Product Description
Product Overview
The SP85N05AGHNK is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | - | 85 | V |
| Gate-Source Voltage | VGS | - | - | - | 20 | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 90 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 60 | A |
| Pulsed Drain Current | IDM | - | - | - | 360 | A |
| Single Pulse Avalanche Energy | EAS | VDD=45V,VGS=10V,L=0.5mH,RG=25 | - | - | 784 | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 125 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 1 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 85 | 90 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 68V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 4.3 | 5.5 | m |
| Input Capacitance | Ciss | VDS =40V, VGS = 0V, f = 1.0MHz | - | 3543 | - | pF |
| Output Capacitance | Coss | - | - | 1058 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 23 | - | pF |
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=165A | - | 49 | - | nC |
| Gate-Source Charge | Qgs | - | - | 16 | - | nC |
| Gate-Drain Charge | Qg d | - | - | 13 | - | nC |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 40V, ID=165A , RG = 1.6 | - | 17 | - | nS |
| Rise Time | tr | - | - | 25 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 36 | - | nS |
| Fall Time | tf | - | - | 15 | - | nS |
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 90 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 62 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 103 | - | nC |
Package Information (PDFN5X6-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 |
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