Surface Mount Silicon NPN Darlington Power Transistor Slkor MJD122D for General Purpose Applications
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Product Description
Product Overview
The MJD122D is a Silicon NPN Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and lead forming for surface mount applications, ensuring robust device performance and reliable operation with minimum lot-to-lot variations.
Product Attributes
- Brand: slkormicro
- Model: MJD122D
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||
| VCBO | Collector-Base Voltage | 100 | V | |
| VCEO | Collector-Emitter Voltage | 100 | V | |
| VEBO | Emitter-Base Voltage | 5 | V | |
| IC | Collector Current-Continuous | 8 | A | |
| PC | Total Power Dissipation @ Ta=25 | 1.75 | W | |
| PC | Collector Power Dissipation | TC=25 | 20 | W |
| Rth j-a | Thermal Resistance, Junction to Ambient | 6.25 | /W | |
| TJ | Junction Temperature | 150 | ||
| Tstg | Storage Temperature Range | -55~150 | ||
| Electrical Characteristics (TC=25 unless otherwise specified) | ||||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 30mA; IB= 0 | 100 | V |
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC=4A; IB= 16mA | 2.0 | V |
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC=8A; IB= 80mA | 4.0 | V |
| VBE(sat) | Base-Emitter Saturation Voltage | IC=8A; IB= 80mA | 4.5 | V |
| VBE(ON) | Base-Emitter voltage | IC= 4A; VCE= 4V | 2.8 | V |
| ICEO | Collector Cutoff Current | VCE=50V; IE= 0 | 10 | uA |
| IEBO | Emitter Cutoff Current | VEB=5V; IC= 0 | 2 | mA |
| hFE1 | DC Current Gain | IC= 4A; VCE= 4V | 1000~12000 | |
| hFE2 | DC Current Gain | IC=8A; VCE= 4V | 100 | |
| fT | Current-GainBandwidth Product | IC=3A; VCE= 4V | 4 | MHz |
| COB | Output Capacitance | IE=0; VCB= 10V; f= 1.0MHz | 200 | pF |
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