100V N Channel Power MOSFET Siliup SP010N15GTH with Low Gate Charge and Fast Switching TO 252 Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP010N15GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, battery management, and uninterruptible power supplies. Key electrical characteristics include a Drain-Source Breakdown Voltage of 100V and a typical RDS(on) of 15m at 10V and 18m at 4.5V. The device is packaged in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N15GTH
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 40 | A | |||
| Continuous Drain Current (Tc=100) | ID | 27 | A | |||
| Pulsed Drain Current | IDM | 160 | A | |||
| Single Pulse Avalanche Energy | EAS | 132 | mJ | |||
| Power Dissipation (Tc=25) | PD | 65 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.92 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 15 | 19 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | - | 18 | 24 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1069 | - | pF |
| Output Capacitance | Coss | - | 356 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 17 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | nC | |
| Gate-Drain Charge | Qg | - | 2.7 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 50V, VDS =50V, ID=50A RG = 2.2 | - | 38 | - | nS |
| Rise Time | tr | - | 12 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 51 | - | nS | |
| Fall Time | tf | - | 17 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 40 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 40 | - | nS |
| Reverse Recovery Charge | Qrr | - | 42 | - | nC | |
Package Dimensions (TO-252):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
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