Low RDS on 85V N Channel MOSFET Siliup SP85N04AGHTD Suitable for DC DC Converters and Power Switching
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Product Description
Product Overview
The SP85N04AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is designed for power switching applications, PWM applications, and DC-DC converters. It comes in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Advanced Split Gate Trench Technology
- Package: TO-263
- Device Code: 85N04AGH
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 85 | V | |||
| RDS(on) | RDS(on) | @10V | 3.5 | m | ||
| Continuous Drain Current | ID | 130 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 85 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 130 | A | |||
| Pulsed Drain Current | IDM | 2 | 520 | A | ||
| Single Pulse Avalanche Energy | EAS | 3 | 756 | mJ | ||
| Total Power Dissipation (Tc=25) | PD | 4 | 140 | W | ||
| Thermal Resistance Junction-Case | RJC | 1 | 0.89 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 85 | --- | --- | V |
| Drain-Source Leakage Current | IDSS | VDS=85V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 2.9 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A 2 | --- | 3.5 | 4.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=40V , VGS=0V , f=1MHz | --- | 3451 | --- | pF |
| Output Capacitance | Coss | --- | 677 | --- | pF | |
| Reverse Transfer Capacitance | Crss | --- | 18 | --- | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=20A | --- | 26 | --- | nC |
| Gate-Source Charge | Qgs | --- | 10 | --- | nC | |
| Gate-Drain Charge | Qgd | --- | 11 | --- | nC | |
| Turn-On Delay Time | Td(on) | VDD=40V , VGS=10V , RG=6 , ID=20A | --- | 16 | --- | ns |
| Rise Time | Tr | --- | 35 | --- | ns | |
| Turn-Off Delay Time | Td(off) | --- | 33 | --- | ns | |
| Fall Time | Tf | --- | 22 | --- | ns | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 2 | --- | --- | 1.2 | V |
Notes:
- 1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2 Tested by pulsed, pulse width 300s, duty cycle 2%.
- 3 EAS data shows Max. rating. Test condition: VDD=42.5V, VGS=10V, L=0.5mH, IAS=55A.
- 4 Power dissipation is limited by 150 junction temperature.
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