Dual N Channel Power MOSFET Siliup SP30N08GDNJ 30V Low Gate Charge Fast Switching for DC DC Converter
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP30N08GDNJ is a 30V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications and isolated DC/DC converters in telecom and industrial sectors.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Dual N-Channel Power MOSFET
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse Avalanche Energy Test
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) | @10V | 8.5 | m | |||
| RDS(on) | @4.5V | 12 | m | |||
| Continuous Drain Current | ID | 18 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | 18 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 12 | A | |||
| Pulse Drain Current | IDM | Tested | 72 | A | ||
| Single Pulse Avalanche Energy | EAS | 1 | 39.2 | mJ | ||
| Power Dissipation (Tc=25C) | PD | 18 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 6.94 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.7 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=15A | - | 8.5 | 11 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 12 | 16 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, F=1MHz | - | 625 | - | pF |
| Output Capacitance | Coss | - | 240 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=10A | - | 7.1 | - | nC |
| Gate-Source Charge | Qgs | - | 2.2 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.1 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V, ID=10A, VGS=10V, RG=4.7 | - | 7 | - | nS |
| Rise Time | tr | - | 18.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 19.5 | - | nS | |
| Fall Time | tf | - | 3.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 18 | A | |
| Reverse Recovery Time | Trr | IS=10 A,di/dt=100 A/sTJ=25 | - | 12 | - | nS |
| Reverse Recovery Charge | Qrr | - | 19 | - | nC | |
| Package Information | ||||||
| Package Type | PDFN3X3-8L | |||||
| Dimensions (Millimeters) | Min. | Max. | ||||
| A | 0.650 | 0.850 | ||||
| A1 | 0.152 | REF. | ||||
| A2 | 0 | 0.05 | ||||
| D | 2.900 | 3.100 | ||||
| D1 | 0.935 | 1.135 | ||||
| D2 | 0.280 | 0.480 | ||||
| E | 2.900 | 3.100 | ||||
| E1 | 3.150 | 3.450 | ||||
| E2 | 1.535 | 1.935 | ||||
| b | 0.200 | 0.400 | ||||
| e | 0.550 | 0.750 | ||||
| L | 0.300 | 0.500 | ||||
| L1 | 0.180 | 0.480 | ||||
| L2 | 0 | 0.100 | ||||
| L3 | 0 | 0.100 | ||||
| H | 0.315 | 0.515 | ||||
| 9 | 13 | |||||
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