Silicon bipolar RF transistor Slkor BFR360F designed for microwave low noise amplifiers and VHF UHF oscillator circuits
Product Overview
The BFR360F is a high-frequency, low-noise silicon bipolar RF transistor designed for microwave low-noise amplifiers operating at low currents. It is suitable for DC power supply voltages between 3.3V and 5V and can be used in oscillator circuits up to 4.0 GHz. This transistor offers approximately 1.0 dB noise figure at 1.8 GHz, low leakage current, small junction capacitance, and a large dynamic range with good current linearity. Its applications include TV tuners, satellite TV receivers, CATV video amplifiers, analog/digital cordless phones, radar proximity switches, wireless remote data transmission, wireless communications, RFID systems, and fiber optic amplifiers. It is ideal for VHF/UHF amplifiers, oscillators, mixers, detectors, and signal amplification in high-frequency microwave signal transmission and reception circuits.
Product Attributes
- Brand: MICROWAVE
- Type: SILICON BIPOLAR RF TRANSISTOR
- Model: BFR360F
- Package Type: SOT323
- Marking: FBs
- Origin: www.slkormicro.com
Technical Specifications
| Parameter Name | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tamb=25) | ||||||
| Collector-Base Breakdown Voltage | BVCBO | 12 | V | |||
| Collector-Emitter Breakdown Voltage | BVCEO | 6 | V | |||
| Emitter-Base Breakdown Voltage | BVEBO | 1.5 | V | |||
| Collector Current | IC | 35 | mA | |||
| Power Dissipation | PT | 300 | mW | |||
| Maximum Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Electrical Characteristics & Specifications (Tamb=25) | ||||||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=1mA, IB=0 | 6 | 9 | V | |
| Collector-Emitter Cutoff Current | ICES | VCE=4V,VBE=0 | 1 | 30 | nA | |
| Collector-Base Cutoff Current | ICBO | VCB=6V,IE=0 | 1 | 30 | nA | |
| Emitter-Base Cutoff Current | IEBO | VEB=6V,IC=0 | 1 | 500 | nA | |
| DC Current Gain | hFE | VCE=3V,IC=15mA | 90 | 120 | 160 | |
| Transition Frequency | fT | VCE=3V,IC=15mA,f=1GHz | 11 | 12 | - | GHz |
| Feedback Capacitance | Cre | IC=iC=0,VCB=5V,f=1MHz | 0.2 | - | pF | |
| Collector Capacitance | Cc | IE=ie=0,VCB=5V,f=1MHz | 0.35 | 0.5 | pF | |
| Emitter Capacitance | Ce | IC=iC=0,VEB=0.5V,f=1MHz | 0.4 | - | pF | |
| Insertion Power Gain | |S21| | VCE=5V,IC=15mA, f=1.8GHz | 9.5 | 10.5 | - | dB |
| Noise Figure | NF | VCE=3V,IC=3mA,f=1.8GHz | 1.0 | - | dB | |
| Maximum Unilateral Power Gain | GUM | VCE=5V,IC=15mA, f=1.8GHz | 11.5 | 12.5 | - | dB |
| Output Third Order Intercept Point | IP3 | VCE=3V,IC=15mA, ZS=ZL=50, f=1.8GHz | 20 | - | dBm | |
Package Dimensions
SOT-323 Package Dimensions (Units:mm)
Pin Connections:
- 1. Base
- 2. Emitter
- 3. Collector
(Diagrams for package dimensions and pin connections are provided in the source document.)
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