Siliup SP40N04TH 40V N Channel MOSFET Featuring Fast Switching and Low Gate Charge for Power Control

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Product Description

Product Overview

The SP40N04TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET is designed for fast switching, low gate charge, and low Rdson, making it suitable for applications such as DC-DC converters and load switching. It features 100% single pulse avalanche energy testing for reliability.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 40N04

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
V(BR)DSS					40	V
RDS(on)TYP		@10V		4.1	6	m
RDS(on)TYP		@4.5V		5	7	m
ID					85	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				40	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID	(TC=25)			85	A
Continuous Drain Current	ID	(TC=100)			57	A
Pulsed Drain Current	IDM				340	A
Single Pulse Avalanche Energy	EAS			288	mJ
Power Dissipation	PD	(TC=25)			80	W
Thermal Resistance Junction-to-Case	RJC			1.6		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	40	-	-	V
Drain-Source Leakage Current	IDSS	VDS=32V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.6	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=20A	-	4.1	6	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=20A	-	5	7	m
Input Capacitance	Ciss	VDS=20V , VGS=0V , f=1MHz	-	3785	-	pF
Output Capacitance	Coss		-	285	-
Reverse Transfer Capacitance	Crss		-	256	-
Total Gate Charge	Qg	VDS=20V , VGS=10V , ID=30A	-	71	-	nC
Gate-Source Charge	Qgs		-	15.3	-
Gate-Drain Charge	Qg d		-	14.5	-
Turn-On Delay Time	Td(on)	VDD=20V VGS=10V , RG=3, ID=30A	-	12	-	nS
Rise Time	Tr		-	28	-
Turn-Off Delay Time	Td(off)		-	63	-
Fall Time	Tf		-	12	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	85	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	17	-	nS
Reverse Recovery Charge	Qrr		-	9	-	nC
Package Information (TO-252)
Symbol	Dimensions In Millimeters	Dimensions In Inches	Min.	Max.	Min.	Max.
A	2.200 - 2.400	0.087 - 0.094
A1	0.000 - 0.127	0.000 - 0.005
b	0.660 - 0.860	0.026 - 0.034
c	0.460 - 0.580	0.018 - 0.023
D	6.500 - 6.700	0.256 - 0.264
D1	5.100 - 5.460	0.201 - 0.215
D2	4.830 REF.	0.190 REF.
E	6.000 - 6.200	0.236 - 0.244
e	2.186 - 2.386	0.086 - 0.094
L	9.800 - 10.400	0.386 - 0.409
L1	2.900 REF.	0.114 REF.
L2	1.400 - 1.700	0.055 - 0.067
L3	1.600 REF.	0.063 REF.
L4	0.600 - 1.000	0.024 - 0.039
	1.100 - 1.300	0.043 - 0.051
	0 - 8	0 - 8
h	0.000 - 0.300	0.000 - 0.012
V	5.350 REF.	0.211 REF.