20V P Channel MOSFET Siliup SP20P25T2 suitable for battery switch and power conversion surface mount

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Product Description

Product Overview

The SP20P25T2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers robust performance with a continuous drain current of -5.5A and low on-resistance.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Package: SOT-23
Device Code: 20P25

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			-20		V
On-Resistance	RDS(on)TYP	@-4.5V		25		m
On-Resistance	RDS(on)TYP	@-2.5V		30		m
Continuous Drain Current	ID			-5.5		A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS			-20		V
Gate-Source Voltage	VGSS			12		V
Continuous Drain Current	ID			-5.5		A
Pulse Drain Current	IDM	Tested		-22		A
Power Dissipation	PD			1.1		W
Junction-to-Ambient Thermal Resistance	RJA			113		C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-20	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-16V , VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-0.4	-0.65	-1.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V, ID=-3.5A	-	25	32	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-2.5V, ID=-3A	-	30	40	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz	-	960	-	pF
Output Capacitance	Coss		-	127	-	pF
Reverse Transfer Capacitance	Crss		-	96	-	pF
Total Gate Charge	Qg	VDS=-15V , VGS=-4.5V , ID=-3A	-	9.4	-	nC
Gate-Source Charge	Qgs		-	1.3	-
Gate-Drain Charge	Qg		-	2.3	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-10V VGS=-4.5V , RG=3.3, ID=3A,	-	9.8	-	nS
Turn-On Rise Time	tr		-	26.2	-
Turn-Off Delay Time	td(off)		-	48.5	-
Turn-Off Fall Time	tf		-	41.6	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-	-1.2	V
Package Information (SOT-23)
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e		0.95 REF.
e1		1.80	2.00
L		0.55 REF.
L1		0.30	0.50
		0	8