60V PNP Low Saturation Medium Power Transistor Slkor PBSS304PX with High Continuous Current Capability

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Product Description

Product Overview

The PBSS304PX is a 60V PNP low saturation medium power transistor designed for high-performance applications. It features a high continuous current capability of -4.3A and a low equivalent on-resistance of 32m (RSAT). With a low saturation voltage of VCE(sat)

Product Attributes

Brand: SLKOR (implied by URL www.slkormicro.com)
Compliance: RoHS compliant, Lead-Free, Halogen and Antimony Free, "Green" Device
Certification: PPAP capable
Case Material: Molded plastic, "Green" molding compound
UL Flammability Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Base Voltage	VCBO	-100	V
Collector-Emitter Voltage	VCEO	-60	V
Emitter-Base Voltage	VEBO	-7	V
Continuous Collector Current	IC	-4.3	A
Peak Pulse Current	ICM	-15	A
Power Dissipation (Note 6)	PD	1.5	W	(@TA = +25C, 25mm x 25mm FR4 PCB)
Power Dissipation (Note 7)	PD	2.1	W	(@TA = +25C, 50mm x 50mm PCB)
Thermal Resistance, Junction to Ambient (Note 6)	RJA	83	C/W
Thermal Resistance, Junction to Ambient (Note 7)	RJA	60	C/W
Thermal Resistance, Junction to Leads (Note 8)	RJL	3.23	C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Collector-Base Breakdown Voltage	BVCBO	-100	V	IC = -100A
Collector-Emitter Breakdown Voltage	BVCER	-100	V	IC = -1A, RB 1k
Collector-Emitter Breakdown Voltage	BVCEO	-60	V	IC = -10mA
Emitter-Base Breakdown Voltage	BVEBO	-7	V	IE = -100A
Collector Cutoff Current	ICBO	< -1	nA	VCB = -80V
Collector Cutoff Current	ICBO	-20	nA	VCB = -80V, TA = +100C
Collector Cutoff Current	ICER R 1k	< -1	nA	VCB = -80V
Collector Cutoff Current	ICER R 1k	-20	nA	VCB = -80V, TA = +100C
Emitter Cutoff Current	IEBO	< -1	nA	VEB = -6V
DC Current Transfer Ratio (hFE)	hFE	100		IC = -10mA, VCE = -1V
DC Current Transfer Ratio (hFE)	hFE	250		IC = -2A, VCE = -1V
DC Current Transfer Ratio (hFE)	hFE	300		IC = -10A, VCE = -1V
Collector-Emitter Saturation Voltage	VCE(sat)	-65	mV	IC = -1A, IB = -100mA
Collector-Emitter Saturation Voltage	VCE(sat)	-215	mV	IC = -5A, IB = -500mA
Base-Emitter Saturation Voltage	VBE(sat)	-950	mV	IC = -5A, IB = -500mA
Base-Emitter Turn-on Voltage	VBE(on)	-840	mV	IC = -5A, VCE = -1V
Transitional Frequency	fT	120	MHz	IC = -100mA, VCE = -10V, f = 50MHz
Output Capacitance	Cobo	48	pF	VCB = -10V, f = 1MHz
Switching Time	tON	39	ns	VCC = -10V, IC = -1A, IB1 = IB2 = -100mA
Switching Time	tOFF	370	ns	VCC = -10V, IC = -1A, IB1 = IB2 = -100mA
Weight		0.05	grams	Approximate
Case Type		SOT89
Package Outline Dimensions (mm) - A		1.50	mm	Typ
Package Outline Dimensions (mm) - B		0.56	mm	Typ
Package Outline Dimensions (mm) - B1		0.48	mm	Typ
Package Outline Dimensions (mm) - c		0.38	mm	Typ
Package Outline Dimensions (mm) - D		4.50	mm	Typ
Package Outline Dimensions (mm) - D1		1.733	mm	Typ
Package Outline Dimensions (mm) - D2		1.71	mm	Typ
Package Outline Dimensions (mm) - E		2.50	mm	Typ
Package Outline Dimensions (mm) - E2		2.20	mm	Typ
Package Outline Dimensions (mm) - e		1.50	mm	Typ
Package Outline Dimensions (mm) - H		4.10	mm	Typ
Package Outline Dimensions (mm) - H1		2.78	mm	Typ
Package Outline Dimensions (mm) - L		1.05	mm	Typ
Package Outline Dimensions (mm) - L1		0.427	mm	Typ
Package Outline Dimensions (mm) - z		0.30	mm	Typ
Suggested Pad Layout (mm) - C		1.500	mm
Suggested Pad Layout (mm) - G		0.244	mm
Suggested Pad Layout (mm) - X		0.580	mm
Suggested Pad Layout (mm) - X1		0.760	mm
Suggested Pad Layout (mm) - X2		1.933	mm
Suggested Pad Layout (mm) - Y		1.730	mm
Suggested Pad Layout (mm) - Y1		3.030	mm
Suggested Pad Layout (mm) - Y2		1.500	mm
Suggested Pad Layout (mm) - Y3		0.770	mm
Suggested Pad Layout (mm) - Y4		4.530	mm