Siliup SP60P60T1 p channel mosfet featuring trench technology for low r dson and power switching circuits
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP60P60T1 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Featuring advanced trench technology, it offers low gate charge and low RDS(on). This device is designed for power switching applications, including PWM applications and DC-DC converters. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP60P60T1
- Technology: Advanced Trench
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| RDS(on) | @10V | 60 | m | |||
| RDS(on) | @4.5V | 75 | m | |||
| Continuous Drain Current | ID | -5 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | - | 20 | V | ||
| Continuous Drain Current (Tc=25 | ID | -5 | A | |||
| Pulsed Drain Current | IDM | -20 | A | |||
| Total Power Dissipation (Tc=25 | PD | 26 | W | |||
| Thermal Resistance Junction-Case | RJC | 4.81 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS= -48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS= 20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -1.0 | -2.0 | -3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -10V , ID= -3.2A | - | 60 | 80 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V , ID= -3A | - | 75 | 100 | m |
| Input Capacitance | Ciss | VDS= -30V , VGS=0V , f=1MHz | - | 240 | - | pF |
| Output Capacitance | Coss | - | 124 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 22 | - | pF | |
| Total Gate Charge | Qg | VDS= -30V , VGS= -10V , ID= -8A | - | 11 | - | nC |
| Gate-Source Charge | Qgs | - | 2.6 | - | ||
| Gate-Drain Charge | Qg d | - | 4.8 | - | ||
| Turn-On Delay Time | Td(on) | VDD=-30V,ID=-8A, VGS=-10V,RGEN=3 | - | 8 | - | ns |
| Rise Time | Tr | - | 4 | - | ||
| Turn-Off Delay Time | Td(off) | - | 32 | - | ||
| Fall Time | Tf | - | 7 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS= -1A , TJ=25 | - | - | 1.2 | V |
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP20P18T1 | SOT-23-3L | 3000 | ||||
| Package Information (SOT-23-3L) | ||||||
| Symbol | Min. | Max. | ||||
| A | 1.050 | 1.250 | mm | |||
| A1 | 0.000 | 0.100 | mm | |||
| A2 | 1.050 | 1.150 | mm | |||
| b | 0.300 | 0.500 | mm | |||
| c | 0.100 | 0.200 | mm | |||
| D | 2.820 | 3.020 | mm | |||
| E1 | 1.500 | 1.700 | mm | |||
| E | 2.650 | 2.950 | mm | |||
| e | 0.950 (Typ.) | |||||
| e1 | 1.800 | 2.000 | mm | |||
| L | 0.300 | 0.600 | mm | |||
| 0 | 8 | |||||
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