General purpose PNP transistor Slkor MMBT4403 designed for medium power amplification and switching

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Product Description

Product Overview

The MMBT4403 is a general-purpose PNP epitaxial planar transistor designed for medium power amplification and switching applications. It features a complementary NPN type (MMBT4401) and is also available in a lead-free version. This transistor is ideal for various medium power amplification and switching tasks.

Product Attributes

Complementary NPN type available: MMBT4401
Available in lead-free version

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Max.	Unit
MAXIMUM RATING @ Ta=25 unless otherwise specified
VCBO	Collector-base voltage			-40	V
VCEO	Collector-emitter voltage			-40	V
VEBO	Emitter-base voltage			-5	V
IC	Collector current (DC)			-0.6	A
PC	Collector dissipation			0.35	W
Tj ,Tstg	Junction and storage temperature		-55	150	C
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
V(BR)CBO	Collector-base breakdown voltage	IC=-100A,IE=0	-40		V
V(BR)CEO	Collector-emitter breakdown voltage	IC=-1mA,IB=0	-40		V
V(BR)EBO	Emitter-base breakdown voltage	IE=-100A,IC=0	-5		V
ICBO	Collector cut-off current	IE = 0; VCB = -35V	-	-0.1	A
ICEO	Collector cut-off current	IE = 0; VCB = -35V	-	-0.1	A
IEBO	Emitter cut-off current	IC = 0; VEB = -4V	-	-0.1	A
hFE	DC current gain	VCE = -1V; IC= -0.1mA	30
		VCE = -1V;IC = -1mA	60
		VCE = -1V;IC = -10mA	100
		VCE = -2V;IC = -150mA	100	300
		VCE = -2V;IC = -500mA	20
VCE(sat)	Collector-emitter saturation voltage	IC = -150mA ,IB = -15mA	-	-0.4	V
VCE(sat)	Collector-emitter saturation voltage	IC = -500mA ,IB = -50mA	-	-0.75	V
VBE(sat)	Base-emitter saturation voltage	IC = -150mA; IB = -15mA	-	-0.75	V
VBE(sat)	Base-emitter saturation voltage	IC = -500mA; IB = -50mA	-	-0.95	V
fT	Transition frequency	IC = -20mA; VCE= -10V; f =100MHz	200		MHz
Dimensions (SOT-23)
Package					SOT-23