60V N Channel Power MOSFET Siliup SP60N02AGTO Featuring Low RDSon and Fast Switching for Power Management
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Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The SP60N02AGTO is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for power switching applications, DC-DC converters, and power management systems. It is supplied in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N02AGTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| RDS(on) | RDS(on)TYP | 10V | 1.9 | m | ||
| RDS(on) | RDS(on)TYP | 4.5V | 2.5 | m | ||
| Continuous Drain Current | ID | 220 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 220 | A | |||
| Continuous Drain Current (Tc=100) | ID | 147 | A | |||
| Pulsed Drain Current | IDM | 880 | A | |||
| Single Pulse Avalanche Energy | EAS | 961 | mJ | |||
| Power Dissipation (Tc=25) | PD | 264 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.47 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | 65 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 1.9 | 2.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=16A | - | 2.5 | 3.2 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 4810 | - | pF |
| Output Capacitance | Coss | - | 1260 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDD = 30V, ID = 40A, VGS = 10V | - | 73 | - | nC |
| Gate-Source Charge | Qgs | - | 12.4 | - | nC | |
| Gate-Drain Charge | Qg | - | 16 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD = 30V, VGS = 10V,ID = 40A, RG = 4 | - | 10.5 | - | nS |
| Rise Time | Tr | - | 7.6 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 44 | - | nS | |
| Fall Time | Tf | - | 9.8 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 220 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 53 | - | nS |
| Reverse Recovery Charge | Qrr | - | 73 | - | nC | |
Note: The test condition for EAS is VDD=30V, VGS=10V, L=0.5mH, RG=25.
Package Information (TOLL)
| Symbol | Dimensions (mm) | ||
|---|---|---|---|
| Min. | Nom. | Max. | |
| A | 2.20 | 2.30 | 2.40 |
| b | 0.65 | 0.75 | 0.85 |
| C | 0.508 | REF | |
| D | 10.25 | 10.40 | 10.55 |
| D1 | 2.85 | 3.00 | 3.15 |
| E | 9.75 | 9.90 | 10.05 |
| E1 | 9.65 | 9.80 | 9.95 |
| E2 | 8.95 | 9.10 | 9.25 |
| E3 | 7.25 | 7.40 | 7.55 |
| e | 1.20 BSC | ||
| F | 1.05 | 1.20 | 1.35 |
| H | 11.55 | 11.70 | 11.85 |
| H1 | 6.03 | 6.18 | 6.33 |
| H2 | 6.85 | 7.00 | 7.15 |
| H3 | 3.00 BSC | ||
| L | 1.55 | 1.70 | 1.85 |
| L1 | 0.55 | 0.7 | 0.85 |
| L2 | 0.45 | 0.6 | 0.75 |
| M | 0.08 REF. | ||
| 8 | 10 | 12 | |
| K | 4.25 | 4.40 | 4.55 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP60N02AGTO | TOLL | 2000 |
Marking
60N02AG : Product code
* : Month code
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