NPN Transistor SOT23 Package Slkor 2SD1782Q Suitable for Switching and Amplifier Applications

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Product Description

Product Overview

This NPN transistor, housed in an SOT-23 package, is designed for switching and AF amplifier applications. It offers reliable performance with key parameters such as Collector Base Voltage (VCBO) and Collector Emitter Voltage (VCEO) up to 80V, and a Collector Current (IC) of 500 mA. The device is suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

Package Type: SOT-23
Transistor Type: NPN
Marking Code: 2SD1782Q (ANQ), 2SD1782R (ANR)

Technical Specifications

Parameter	Symbol	Gain Group Q	Gain Group R	Value	Unit	Conditions
Collector Base Voltage	VCBO			80	V
Collector Emitter Voltage	VCEO			80	V
Emitter Base Voltage	VEBO			5	V
Collector Current	IC			500	mA
Maximum Power Dissipation	PD			200	mW
Junction Temperature	TJ			150
Storage Temperature Range	TSTG			-55 to +150
DC Current Gain	hFE	120 - 180	270 - 390	--	--	VCE = 3 V, IC = 100 mA
Collector Base Cutoff Current	ICBO			500	nA	VCB = 50V
Emitter Base Cutoff Current	IEBO			500	nA	VEB = 4 V
Collector Base Breakdown Voltage	V(BR)CBO			80	V	IC = 50 A
Collector Emitter Breakdown Voltage	V(BR)CEO			80	V	IC = 2 mA
Emitter Base Breakdown Voltage	V(BR)EBO			5	V	IE = 50 A
Collector Emitter Saturation Voltage	VCE(sat)			0.5	V	IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage	VBE(sat)			1.2	V	IC = 500 mA, IB = 50 mA
Transition Frequency	FT			120	MHz	VCE = 10 V, IC = 50 mA, f = 100 MHz
Output Capacitance	Cob			7.5	pF	VCB = 10 V, f = 1 MHz

Package Outline

SOT-23

Soldering and Storage Conditions

Recommended Reflow Soldering: Recommended peak temperature over 245 . Adjustments for lower peak temperatures include longer peak temperature time, longer soldering time, and thicker solder paste.
Hand Soldering: Temperature: 370 , Time: 3s max., Times: one time.
Storage Conditions: Temperature: 5 to 40 , Humidity: 30 to 80% RH. Recommended period: One year after manufacturing.