Dual N Channel MOSFET Siliup SP30N06DP8 30 Volt Device for High Frequency Circuits and Power Switching
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP30N06DP8 is a 30V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is available in a SOP-8L package and is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP30N06DP8
- Technology: Dual N-Channel MOSFET
- Package: SOP-8L
- Marking: 30N06D (Device Code)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(ON) | @10V | 6 | 7.5 | m | |
| RDS(on)TYP | RDS(ON) | @4.5V | 7.5 | 10 | m | |
| ID | ID | 12 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 12 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 12 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 48 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 56 | mJ | ||
| Power Dissipation | PD | (Ta=25) | 2.5 | W | ||
| Junction-to-Ambient Thermal Resistance | RJA | (Ta=25) | 50 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=10A | - | 6 | 7.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A | - | 7.5 | 10 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | - | 1378 | - | pF |
| Output Capacitance | Coss | VDS=20V, VGS=0V, f=1MHz | - | 195 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V, VGS=0V, f=1MHz | - | 155 | - | pF |
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=10A | - | 33.7 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V, VGS=10V, ID=10A | - | 8.5 | - | nC |
| Gate-Drain Charge | Qg | VDS=15V, VGS=10V, ID=10A | - | 7.5 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V, RG=3, ID=10A | - | 7.5 | - | nS |
| Rise Time | Tr | VDD=15V, VGS=10V, RG=3, ID=10A | - | 14.5 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=15V, VGS=10V, RG=3, ID=10A | - | 35.2 | - | nS |
| Fall Time | Tf | VDD=15V, VGS=10V, RG=3, ID=10A | - | 9.6 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 12 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, Tj=25 | - | 13 | - | nS |
| Reverse Recovery Charge | Qrr | IS=10A, di/dt=100A/us, Tj=25 | - | 4 | - | nC |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (Pitch) | 1.27 | REF. | |||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| (Lead Angle) | 0 | 8 | ||||
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