Durable PNP Silicon Epitaxial Planar Transistor Slkor MMDT2907A for Amplifier and Switching Circuits

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Product Description

Product Overview

The MMDT2907A is a PNP Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers a range of DC current gain values depending on the operating conditions and features specific cutoff currents and breakdown voltages. The transistor is suitable for various electronic circuits requiring amplification or switching functionalities.

Product Attributes

Brand: slkormicro
Model: MMDT2907A
Transistor Type: PNP Silicon Epitaxial Planar Transistor
Package: SOT-363
Pinout: 1. Emitter, 2. Base, 3. Collector, 4. Emitter, 5. Base, 6. Collector

Technical Specifications

Parameter	Symbol	Min.	Max.	Unit	Conditions
Absolute Maximum Ratings
Collector Base Voltage	-VCBO		60	V	(Ta = 25 C)
Collector Emitter Voltage	-VCEO		60	V	(Ta = 25 C)
Emitter Base Voltage	-VEBO		5	V	(Ta = 25 C)
Collector Current	-IC		600	mA	(Ta = 25 C)
Power Dissipation	Ptot		200	mW	(Ta = 25 C)
Junction Temperature	Tj		150	C
Storage Temperature Range	Tstg	-55	+150	C
Characteristics
DC Current Gain	hFE	75	-	-	-VCE = 10 V, -IC = 0.1 mA (Ta = 25 C)
DC Current Gain	hFE	100	-	-	-VCE = 10 V, -IC = 1 mA (Ta = 25 C)
DC Current Gain	hFE	100	300	-	-VCE = 10 V, -IC = 10 mA (Ta = 25 C)
DC Current Gain	hFE	100	-	-	-VCE = 10 V, -IC = 150 mA (Ta = 25 C)
DC Current Gain	hFE	50	-	-	-VCE = 10 V, -IC = 500 mA (Ta = 25 C)
Collector Base Cutoff Current	-ICBO		-100	nA	-VCB = 50 V (Ta = 25 C)
Collector Emitter Cutoff Current	-ICES		-100	nA	-VCE = 30 V (Ta = 25 C)
Emitter Base Cutoff Current	-IEBO		-100	nA	-VEB = 3 V (Ta = 25 C)
Collector Base Breakdown Voltage	-V(BR)CBO	60	-	V	-IC = 10 A (Ta = 25 C)
Collector Emitter Breakdown Voltage	-V(BR)CEO	60	-	V	-IC = 10 mA (Ta = 25 C)
Emitter Base Breakdown Voltage	-V(BR)EBO	5	-	V	-IE = 10 A (Ta = 25 C)
Collector Emitter Saturation Voltage	-VCE(sat)		0.4	V	-IC = 150 mA, -IB = 15 mA (Ta = 25 C)
Collector Emitter Saturation Voltage	-VCE(sat)		1.6	V	-IC = 500 mA, -IB = 50 mA (Ta = 25 C)
Base Emitter Saturation Voltage	-VBE(sat)		1.3	V	-IC = 150 mA, -IB = 15 mA (Ta = 25 C)
Base Emitter Saturation Voltage	-VBE(sat)		2.6	V	-IC = 500 mA, -IB = 50 mA (Ta = 25 C)
Transition Frequency	fT	200	-	MHz	-VCE = 20 V, IE = 50 mA, f = 100 MHz (Ta = 25 C)
Collector Output Capacitance	Cob		8	pF	-VCB = 10 V, f = 100 KHz (Ta = 25 C)
Turn-on Time	ton		50	ns	-VCC = 30 V, -VBE(OFF) = 1.5 V, -IC = 150 mA, -IB1 = 15 mA (Ta = 25 C)
Delay Time	td		10	ns	-VCC = 30 V, -VBE(OFF) = 1.5 V, -IC = 150 mA, -IB1 = 15 mA (Ta = 25 C)
Rise Time	tr		40	ns	-VCC = 30 V, -VBE(OFF) = 1.5 V, -IC = 150 mA, -IB1 = 15 mA (Ta = 25 C)
Turn-off Time	toff		100	ns	-VCC = 30 V, -IC = 150 mA, IB1 = IB2 = -15 mA (Ta = 25 C)
Storage Time	tstg		80	ns	-VCC = 30 V, -IC = 150 mA, IB1 = IB2 = -15 mA (Ta = 25 C)
Fall Time	tf		30	ns	-VCC = 30 V, -IC = 150 mA, IB1 = IB2 = -15 mA (Ta = 25 C)
Dimensions (mm)
Package	SOT-363
A		1.1	1.3	mm
A1		0.1	0.30	mm
bp		0.20	0.45	mm
c		0.15	0.25	mm
D		1.8	2.2	mm
E		1.35	1.75	mm
e			0.65	mm
e1		1.15	1.35	mm
HE		2.0	2.4	mm
Lp		0.15	0.35	mm
Q		0.10	0.30	mm
w		0.25	0.40	mm
v		0.10	0.20	mm
y			0.10	mm