Surface Mount P Channel MOSFET Siliup SP3407LT2C 30V 3.6A Continuous Drain Current for DC DC Converters

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Product Description

Product Overview

The SP3407LT2C is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a continuous drain current of -3.6A and features low on-resistance characteristics at various gate-source voltages.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Package: SOT-23
Circuit Diagram Marking: 3407

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS		-30			V
Static Drain-Source On-Resistance	RDS(on)	-10V		50		m
Static Drain-Source On-Resistance	RDS(on)	-4.5V		70		m
Continuous Drain Current	ID			-3.6		A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS		-30			V
Gate-Source Voltage	VGSS			20		V
Continuous Drain Current	ID			-3.6		A
Pulse Drain Current	IDM	Tested		-14.4		A
Power Dissipation	PD			1		W
Thermal Resistance Junction-to-Ambient	RJA			125		C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-30			V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-1	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID =-3A		50	60	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID =-2A		70	90	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz		463		pF
Output Capacitance	Coss			82
Reverse Transfer Capacitance	Crss			68
Total Gate Charge	Qg	VDS=-15V , VGS=-4.5V , ID=-4.2A		8.5		nC
Gate-Source Charge	Qgs			1.8
Gate-Drain Charge	Qg d			2.7
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-15V VGS=-10V , RG=3 , RL=3.6		18.4		nS
Turn-On Rise Time	tr			11.4
Turn-Off Delay Time	td(off)			39.4
Turn-Off Fall Time	tf			5.2
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Package Information (SOT-23)
Symbol	Dimensions (mm)	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e	(REF.)	0.95
e1		1.80	2.00
L	(REF.)	0.55
L1		0.30	0.50
		0	8