NPN Silicon Epitaxial Planar Transistor Slkor MMDT2222A for in Amplification and Switching Circuits

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Product Description

Product Overview

The MMDT2222A is an NPN Silicon Epitaxial Planar Transistor designed for general purpose and switching applications. It offers reliable performance with defined current gain, breakdown voltages, and saturation voltages, making it suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Model: MMDT2222A
Package: SOT-363
Brand: SLKORMICRO (implied by website URL)

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Absolute Maximum Ratings
Collector Base Voltage	VCBO	75	V	(Ta = 25 C)
Collector Emitter Voltage	VCEO	40	V	(Ta = 25 C)
Emitter Base Voltage	VEBO	6	V	(Ta = 25 C)
Collector Current	IC	600	mA	(Ta = 25 C)
Power Dissipation	Ptot	200	mW	(Ta = 25 C)
Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-55 to +150	C
Characteristics
DC Current Gain	hFE	35	-	VCE = 10 V, IC = 0.1 mA
DC Current Gain	hFE	50	-	VCE = 10 V, IC = 1 mA
DC Current Gain	hFE	75	-	VCE = 10 V, IC = 10 mA
DC Current Gain	hFE	50	-	VCE = 1 V, IC = 150 mA
DC Current Gain	hFE	100	-	VCE = 10 V, IC = 150 mA
DC Current Gain	hFE	40	-	VCE = 10 V, IC = 500 mA
Collector Base Cutoff Current	ICBO	-100	nA	VCB = 60 V
Emitter Base Cutoff Current	IEBO	-100	nA	VEB = 3 V
Collector Base Breakdown Voltage	V(BR)CBO	75	V	IC = 10 A
Collector Emitter Breakdown Voltage	V(BR)CEO	40	V	IC = 10 mA
Emitter Base Breakdown Voltage	V(BR)EBO	6	V	IE = 10 A
Collector Emitter Saturation Voltage	VCE(sat)	-0.3	V	IC = 150 mA, IB = 15 mA
Collector Emitter Saturation Voltage	VCE(sat)	-1	V	IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage	VBE(sat)	-0.6	V	IC = 150 mA, IB = 15 mA
Base Emitter Saturation Voltage	VBE(sat)	-1.2	V	IC = 500 mA, IB = 50 mA
Transition Frequency	fT	300	MHz	VCE = 20 V, IE = 20 mA, f = 100 MHz
Collector Output Capacitance	Cob	-8	pF	VCB = 10 V, f = 100 KHz
Emitter Input Capacitance	Cib	-25	pF	VEB = 0.5 V, f = 100 KHz
Delay Time	td	-10	ns	VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA
Rise Time	tr	-25	ns	VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA
Storage Time	tstg	-225	ns	VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA
Fall Time	tf	-60	ns	VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA
Package Dimensions (SOT-363)
Dimension	Symbol	Min	Max	Unit
Overall Width	w	1.1	1.3	mm
Overall Height	E	1.8	2.2	mm
Pitch	e	0.45	0.65	mm
Body Length	Lp	1.15	1.35	mm
Body Width	D	1.3	1.7	mm
Lead Width	e1	0.15	0.4	mm
Lead Length	Q	0.10	0.30	mm
Height (max)	A1	0.1	0.3	mm
Max Body Thickness	HE	0.20	0.40	mm
Max Lead Exposure	bp	0.25	0.45	mm