High voltage NPN transistor Slkor MMBTA42 ideal for electronic circuits requiring 300 volt breakdown

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Product Description

Product Overview

The MMBTA42 is an NPN transistor designed for high breakdown voltage applications. It features a low collector-emitter saturation voltage, making it suitable for various electronic circuits. This transistor is complementary to the MMBTA92 (PNP) transistor.

Product Attributes

Type: NPN TRANSISTOR
Model: MMBTA42
Complementary to: MMBTA92 (PNP)
Package: SOT-23
Manufacturer: slkormicro.com

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	300		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 1mA, IB=0	300		V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100A, IC=0		5	V
Collector cut-off current	ICBO	VCB=200V, IE=0		0.25	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0		0.1	A
DC current gain	hFE(1)	VCE= 10V, IC= 1mA	60
DC current gain	hFE(2)	VCE= 10V, IC=10mA	100	200
DC current gain	hFE(3)	VCE=10V, IC=30mA	60
Collector-emitter saturation voltage	VCE(sat)	IC=20mA, IB= 2mA		0.2	V
Base-emitter saturation voltage	VBE(sat)	IC= 20mA, IB=2mA		0.9	V
Transition frequency	fT	VCE= 20V, IC= 10mA, f=30MHz		50	MHz

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	300	V
Collector-Emitter Voltage	VCEO	300	V
Emitter-Base Voltage	VEBO	5	V
Collector Current-Continuous	IC	0.3	A
Collector Power dissipation	PC	0.35	W
Thermal Resistance, junction to Ambient	RJA	357	/W
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55 to +150

Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 - 1.150	0.035 - 0.045
A1	0.000 - 0.100	0.000 - 0.004
A2	0.900 - 1.050	0.035 - 0.041
b	0.300 - 0.500	0.012 - 0.020
c	0.080 - 0.150	0.003 - 0.006
D	2.800 - 3.000	0.110 - 0.118
E	1.200 - 1.400	0.047 - 0.055
E1	2.250 - 2.550	0.089 - 0.100
e	1.800 - 2.000	0.071 - 0.079
e1	0.300 - 0.500	0.012 - 0.020
L	0.550 REF	0.022 REF
L1	0.950 TYP	0.037 TYP
	0 - 8	0 - 8