30V N Channel MOSFET Siliup SP2306T2 Designed for Surface Mount Applications and Power Management Solutions

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP2306T2 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is commonly used in battery switches and DC/DC converters. The device features a low on-resistance at various gate-source voltages, making it an efficient component for power management solutions.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP2306T2
Channel Type: N-Channel MOSFET
Package: SOT-23

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				30	V
RDS(on)		@10V		38		m
ID				3.6		A
RDS(on)		@4.5V		45		m
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				30	V
Gate-Source Voltage	VGSS			20		V
Continuous Drain Current	ID				3.6	A
Pulse Drain Current	IDM	Tested			14.4	A
Power Dissipation	PD				0.7	W
Thermal Resistance Junction-to-Ambient	RJA				178	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=24V , VGS=0V	-	-	0.5	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	1	1.5	2	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID =3.5A	-	38	47	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID =2.8A	-	45	65	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=15V , VGS=0V , f=1MHz	-	305	-	pF
Output Capacitance	Coss		-	65	-
Reverse Transfer Capacitance	Crss		-	29	-
Total Gate Charge	Qg	VDS=15V , VGS=10V , ID=2.5A	-	3.0	-	nC
Gate-Source Charge	Qgs		-	1.6	-
Gate-Drain Charge	Qg		-	0.6	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=15V VGS=10V , RG=6, ID=1A	-	7	-	nS
Turn-On Rise Time	tr		-	12	-
Turn-Off Delay Time	td(off)		-	14	-
Turn-Off Fall Time	tf		-	6	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Package Information (SOT-23)
Symbol	Dimensions (mm)	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e		0.95 REF.
e1		1.80	2.00
L		0.55 REF.
L1		0.30	0.50
		0	8