Surface mount N Channel MOSFET Siliup SP2002KT2 featuring 20V voltage rating and 2KV ESD protection

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Product Description

Product Overview

The SP2002KT2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is ideal for applications such as battery switches and DC/DC converters.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: N-Channel MOSFET
Package: SOT-23
Device Code: 02K

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			20		V
RDS(on)		@4.5V		250		m
RDS(on)		@2.5V		350		m
ID				0.75		A
Features
High power and current handing capability
Surface mount package
ESD protected 2KV
Application
Battery Switch
DC/DC Converter
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS			20		V
Gate-Source Voltage	VGSS		-12		12	V
Continuous Drain Current	ID			0.75		A
Pulse Drain Current	IDM	Tested		3		A
Power Dissipation	PD				350	mW
Thermal Resistance Junction-to-Ambient	RJA				357	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	20	-	-	V
Drain-Source Leakage Current	IDSS	VDS=16V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	-	10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	0.30	0.65	1.00	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=500mA	-	250	380	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=2.5V , ID=200mA	-	350	450	m
Input Capacitance	Ciss	VDS=10V , VGS=0V , f=1MHz	-	35	-	pF
Output Capacitance	Coss		-	19	-
Reverse Transfer Capacitance	Crss		-	9	-
Total Gate Charge	Qg	VDS=10V , VGS=4.5V , ID=500mA	-	0.8	-	nC
Gate-Source Charge	Qgs		-	0.3	-
Gate-Drain Charge	Qg d		-	0.16	-
Turn-On Delay Time	td(on)	VDD=10V VGS=4.5V , RG=10 , ID=500mA	-	4	-	nS
Turn-On Rise Time	tr		-	19	-
Turn-Off Delay Time	td(off)		-	10	-
Turn-Off Fall Time	tf		-	21	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
SOT-23 Package Information
Symbol	Dimensions (mm)	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e	REF.	0.95
e1		1.80	2.00
L	REF.	0.55
L1		0.30	0.50
		0	8
Order Information
Device	Package	Unit/Tape
SP2002KT2	SOT-23	3000