80V N Channel Power MOSFET Siliup SP80N03BGHNK with Low Gate Charge and Split Gate Trench Technology
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Product Description
Product Overview
The SP80N03BGHNK is an 80V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP80N03BGHNK
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
- Marking: 80N03BGH
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 80 | V | |||
| RDS(on) | RDS(on) | 10V | 3.3 | m | ||
| Continuous Drain Current | ID | 110 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 80 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 110 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 75 | A | |||
| Pulse Drain Current (Tested) | IDM | 440 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 600 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 120 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.04 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BV DSS | ID = 250A, VGS = 0V | 80 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 64V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 3.3 | 4.1 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=40V, F=1MHz | - | 4360 | - | pF |
| Output Capacitance | Coss | - | 500 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 26 | - | pF | |
| Total Gate Charge | Qg | VDS=40V, VGS=10V, ID=20A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 15 | - | nC | |
| Gate-Drain Charge | Qgd | - | 20 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=40V, ID=20A, VGS=10V, RG=3 | - | 17 | - | nS |
| Rise Time | tr | - | 39 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 64 | - | nS | |
| Fall Time | tf | - | 42 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 110 | A | |
| Reverse Recovery Time | trr | IS=50 A,di/dt=100 A/sTJ=25 | - | 45 | - | nS |
| Reverse Recovery Charge | Qrr | - | 56 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Dimension A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| Dimension A3 | 0.254REF. | 0.010REF. | ||||
| Dimension D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| Dimension E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| Dimension D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| Dimension E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| Dimension D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| Dimension E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| Dimension k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| Dimension b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| Dimension e | 1.270TYP. | 0.050TYP. | ||||
| Dimension L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| Dimension L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| Dimension H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| Dimension | 10 | 12 | ||||
Note: 1. The test condition is VDD=40V, VGS=10V, L=0.5mH, RG=25
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