Siliup SP015N06GHTO 150V N Channel MOSFET Featuring Low Gate Charge and High Continuous Drain Current

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Product Description

Product Overview

The SP015N06GHTO is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for power switching applications and DC-DC converters, offering 100% single pulse avalanche energy testing for reliability. It is available in a TOLL package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP015N06GHTO
Package Type: TOLL
Channel Type: N-Channel

Technical Specifications

Parameter	Symbol	Test Condition	Rating	Unit
Drain-Source Voltage	VDS	-	150	V
Gate-Source Voltage	VGS	-	20	V
Continuous Drain Current (Tc=25)	ID	-	185	A
Continuous Drain Current (Tc=100)	ID	-	125	A
Pulsed Drain Current	IDM	-	740	A
Single Pulse Avalanche Energy	EAS	-	812	mJ
Power Dissipation (Tc=25)	PD	-	350	W
Thermal Resistance Junction-to-Case	RJC	-	0.36	/W
Storage Temperature Range	TSTG	-	-55 to 150
Operating Junction Temperature Range	TJ	-	-55 to 150
Drain-Source Breakdown Voltage	BVDSS	ID = 250A, VGS = 0V	150 (Min), 170 (Max)	V
Drain Cut-Off Current	IDSS	VDS = 120V, VGS = 0V	- (Max) 1	A
Gate Leakage Current	IGSS	VGS = 20V, VDS = 0V	- (Max) 0.1	-
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	2.0 (Min), 3.0 (Typ), 4.0 (Max)	V
Drain-Source ON Resistance	RDS(ON)	VGS = 10V, ID = 20A	- (Typ) 5.7, - (Max) 6.5	m
Input Capacitance	Ciss	VDS = 75V, VGS = 0V, f = 1.0MHz	- (Typ) 5240	pF
Output Capacitance	Coss	-	- (Typ) 430	pF
Reverse Transfer Capacitance	Crss	-	- (Typ) 14	pF
Total Gate Charge	Qg	VDS=75V , VGS=10V , ID=104A	- (Typ) 70	nC
Gate-Source Charge	Qgs	-	- (Typ) 31	-
Gate-Drain Charge	Qgd	-	- (Typ) 20	-
Turn-On Delay Time	td(on)	VGS = 10V, VDS = 50V, ID = 104A, RG = 6	- (Typ) 24	nS
Rise Time	tr	-	- (Typ) 35	-
Turn-Off Delay Time	td(off)	-	- (Typ) 46	-
Fall Time	tf	-	- (Typ) 15	-
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V	- (Max) 1.2	V
Maximum Body-Diode Continuous Current	IS	-	- (Max) 185	A
Body Diode Reverse Recovery Time	Trr	IS=50A, di/dt=100A/us, TJ=25	- (Typ) 98	nS
Body Diode Reverse Recovery Charge	Qrr	-	- (Typ) 217	nC

Note: The test condition for EAS is VDD=50V, VGS=10V, L=0.5mH, RG=25.

Order Information:

Device	Package	Unit/Tape
SP015N06GHTO	TOLL	2000

Package Dimensions (TOLL):

Symbol	Dimensions (Millimeters)
A	2.20 - 2.40
b	0.65 - 0.85
C	0.508 (REF)
D	10.25 - 10.55
D1	2.85 - 3.15
E	9.75 - 10.05
E1	9.65 - 9.95
E2	8.95 - 9.25
E3	7.25 - 7.55
e	1.20 (BSC)
F	1.05 - 1.35
H	11.55 - 11.85
H1	6.03 - 6.33
H2	6.85 - 7.15
H3	3.00 (BSC)
L	1.55 - 1.85
L1	0.55 - 0.85
L2	0.45 - 0.75
M	0.08 (REF)
	8 - 12
K	4.25 - 4.55