Low Gate Charge 60V N Channel MOSFET Siliup SPZ44TQ for High Frequency Power Conversion and Switching

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Product Description

Product Overview

The SPZ44TQ is a 60V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET offers fast switching speeds, low gate charge, and low Rdson. It is ideal for DC-DC converter applications and is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: Z44
Package: TO-220-3L

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Drain-Source Voltage	VDS				60	V
Gate-Source Voltage	VGS				25	V
Continuous Drain Current (TC=25)	ID				50	A
Continuous Drain Current (TC=100)	ID				33.3	A
Pulsed Drain Current	IDM				200	A
Single Pulse Avalanche Energy	EAS				1280	mJ
Power Dissipation (TC=25)	PD				94	W
Thermal Resistance Junction-to-Case	RJC			1.33		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V , TJ=25	-	-	25	uA
Gate-Source Leakage Current	IGSS	VGS=25V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	2	3	4	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=25A	-	17	22	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=25V , VGS=0V , f=1MHz	-	1476	-	pF
Output Capacitance	Coss		-	354	-
Reverse Transfer Capacitance	Crss		-	90	-
Total Gate Charge	Qg	VDS=44V , VGS=10V , ID=25A	-	36	-	nC
Gate-Source Charge	Qgs		-	5	-
Gate-Drain Charge	Qgd		-	9	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=28V VGS=10V , RG=12, ID=25A	-	12	-	nS
Rise Time	Tr		-	60	-
Turn-Off Delay Time	Td(off)		-	44	-
Fall Time	Tf		-	45	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	50	A
Reverse Recovery Time	Trr	IS=25A, di/dt=100A/us, TJ=25	-	65	-	nS
Reverse Recovery Charge	Qrr		-	175	-	nC

TO-220-3L Package Information (Dimensions in Millimeters)
Symbol	Min.	Max.	Typ.
A	4.400	4.600
A1	2.250	2.550
b	0.710	0.910
b1	1.170	1.370
c	0.330	0.650
c1	1.200	1.400
D	9.910	10.250
E	8.950	9.750
E1	12.650	13.050
e			2.540
e1	4.980	5.180
F	2.650	2.950
H	7.900	8.100
h	0.000	0.300
L	12.900	13.400
L1	2.850	3.250
V			6.900 REF.
	3.400	3.800