100V N Channel Power MOSFET Siliup SP010N06BGTQ with Low Gate Charge and Split Gate Trench Technology
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Product Description
Product Overview
The SP010N06BGTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. It comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N06BGTQ
- Technology: Advanced Split Gate Trench Technology
- Package: TO-220-3L-C(1:G 2:D 3:S)
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 100 | V |
| RDS(on)TYP | - | @10V | - | 6.5 | - | m |
| RDS(on)TYP | - | @4.5V | - | 8.1 | - | m |
| ID | - | - | - | - | 110 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | 20 | - | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 110 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 73 | A |
| Pulsed Drain Current | IDM | - | - | - | 440 | A |
| Single Pulse Avalanche Energy | EAS | VDD=50V, VGS=10V, L=0.5mH, RG=25 | - | 256 | - | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 125 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 1 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.7 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 40A | - | 6.5 | 8.2 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 30A | - | 8.1 | 10.0 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 2312 | - | pF |
| Output Capacitance | Coss | - | - | 729 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 25.6 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 60 | - | nC |
| Gate-Source Charge | Qgs | - | - | 21 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 14 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 17.6 | - | nS |
| Rise Time | tr | - | - | 21 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 31 | - | - |
| Fall Time | tf | - | - | 10.6 | - | - |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 110 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 51 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 85 | - | nC |
| TO-220-3L Package Information (Dimensions In Millimeters) | ||
|---|---|---|
| Symbol | Min. | Max. |
| A | 9.85 | 10.15 |
| B | 3.60 | 3.70 |
| C | 6.35 | 6.55 |
| D | 15.55 | 15.95 |
| E | 12.85 | 13.15 |
| F | 1.17 | 1.37 |
| G | 0.70 | 0.90 |
| H | 2.30 | 2.70 |
| I | 4.40 | 4.60 |
| J | 1.20 | 1.40 |
| K | 0.40 | 0.60 |
| L | 2.23 | 2.53 |
| M | 4.98 | 5.18 |
| N | 0.55 | 0.75 |
| O | 1.62 | 1.82 |
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