Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Slkor BFR540 for Wideband Applications
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Product Description
Product Overview
The BFR540 is an NPN silicon epitaxial transistor designed for microwave low-noise amplification. It offers high power gain, wide bandwidth, low noise, low leakage current, small junction capacitance, and a large dynamic range with good current linearity. This transistor is ideal for applications in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency wideband low-noise amplifiers. Typical applications include satellite TV tuners, CATV amplifiers, analog and digital cordless phones, radar detectors, wireless security alarms, RF modules, and repeater amplifiers in fiber optic transmission systems.
Product Attributes
- Brand: SLKORMicro
- Product Type: NPN Silicon Epitaxial Transistor
- Application: Microwave Low-Noise Amplifier
- Marking: 33W
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tamb=25) | ||||||
| Collector-Base Breakdown Voltage | BVCBO | 20 | V | |||
| Collector-Emitter Breakdown Voltage | BVCEO | 12 | V | |||
| Emitter-Base Breakdown Voltage | BVEBO | 2.5 | V | |||
| Collector Current | IC | 120 | mA | |||
| Power Dissipation | PT | 500 | mW | |||
| Maximum Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Electrical Characteristics & Specifications (Tamb=25) | ||||||
| Collector Cutoff Current | ICBO | VCB=8V, IE=0 | 0.1 | A | ||
| DC Current Gain | hFE | VCE=8V, IC=40mA | 60 | 120 | 250 | |
| Characteristic Frequency | fT | VCE=8V, IC=40mA | 9 | - | GHz | |
| Feedback Capacitance | Cre | IC=iC=0,VCB=8V,f=1MHz | 0.6 | - | pF | |
| Collector Capacitance | CC | IE=ie=0,VCB=8V,f=1MHz | 0.9 | - | pF | |
| Emitter Capacitance | Ce | IC=iC=0,VEB=0.5V,f=1MHz | 2 | - | pF | |
| Insertion Power Gain | |S21| | IC=40mA,VCE=8V,f=1GHz | 12 | 13 | - | dB |
| Noise Figure | NF | VCE=8V,IC=10mA,f=900MHz | 1.3 | 1.8 | dB | |
| Noise Figure | NF | VCE=8V,IC=40mA,f=900MHz | 1.9 | 2.4 | dB | |
| Noise Figure | NF | VCE=8V,IC=10mA,f=2GHz | 2.1 | - | dB | |
| Maximum Unilateral Power Gain | GUM | IC=40mA,VCE=8V,f=900MHz | 14 | - | dB | |
| Maximum Unilateral Power Gain | GUM | IC=40mA,VCE=8V,f=2GHz | 7 | - | dB | |
| Output Voltage | VO | IC = 40mA; VCE = 8 V,ZL = ZS = 75 | 550 | - | mV | |
| Output Power at 1dB Gain Compression | PL1 | IC=40mA,VCE=8V,RL=50,f=900MHz | 21 | - | dBm | |
| Third Order Intercept Point | ITO | -34 | - | dBm | ||
| Package Information | ||||||
| Package Type | SOT23 | |||||
| Pin Connections | 1: Base, 2: Emitter, 3: Collector | |||||
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