20V complementary MOSFET Siliup SP2011ACNK suitable for dc dc converters and motor control applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP2011ACNK is a 20V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It features TrenchFET technology for excellent RDS(on) and low gate charge, enabling fast switching speeds. This MOSFET is suitable for applications such as motor control, DC-DC converters, and power management.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: SP2011ACNK
Type: Complementary MOSFET
Package: PDFN5X6-8L
Device Code: SP2011ACNK

Technical Specifications

Parameter	Symbol	Condition	N-Channel Typ.	P-Channel Typ.	Unit
Product Summary
Breakdown Voltage (Drain-Source)	V(BR)DSS		20V	-20V
On-Resistance	RDS(on)	@4.5V	8m
On-Resistance	RDS(on)	@2.5V	10m
On-Resistance	RDS(on)	@-4.5V		9m
On-Resistance	RDS(on)	@-2.5V		11m
Continuous Drain Current	ID		35A	-38A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25 unless otherwise noted)	20V	-20V	V
Gate-Source Voltage	VGS	(Ta=25 unless otherwise noted)	12V	12V	V
Continuous Drain Current	ID	(Ta=25 unless otherwise noted)	35A	-38A	A
Drain Current Pulsed	IDM	(Ta=25 unless otherwise noted)	140A	152A	A
Power Dissipation	PD	(Ta=25 unless otherwise noted)	32.8W		W
Junction Temperature	TJ	(Ta=25 unless otherwise noted)	150
Storage Temperature	TSTG	(Ta=25 unless otherwise noted)	-55~ +150
N-Channel Electrical Characteristics
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID = 250A	20V	-	V
Zero gate voltage drain current	IDSS	VDS = 20V,VGS = 0V	1 A	-
Gate-body leakage current	IGSS	VGS =12V, VDS = 0V	0.1 A	-
Gate threshold voltage	VGS(th)	VDS =VGS, ID = 250A	0.5 - 1.0V	-
Drain-source on-resistance	RDS(on)	VGS = 4.5V, ID = 10A	8 - 10 m	-
Drain-source on-resistance	RDS(on)	VGS = 2.5V, ID = 8A	10 - 15 m	-
Input Capacitance	Ciss	VDS=10V , VGS=0V , f=1MHz	1196 pF	-
Output Capacitance	Coss	VDS=10V , VGS=0V , f=1MHz	178 pF	-
Reverse Transfer Capacitance	Crss	VDS=10V , VGS=0V , f=1MHz	146 pF	-
Total gate charge	Qg	VDS=10V , VGS=4.5V , ID=10A	13.4 nC	-
Gate-source charge	Qgs	VDS=10V , VGS=4.5V , ID=10A	2.6 nC	-
Gate-drain charge	Qgd	VDS=10V , VGS=4.5V , ID=10A	3.4 nC	-
Turn-on delay time	td(on)	VDD=10V , VGS=4.5V , RG=3.3, ID=15A	7.8 ns	-
Turn-on rise time	tr	VDD=10V , VGS=4.5V , RG=3.3, ID=15A	19.4 ns	-
Turn-off delay time	td(off)	VDD=10V , VGS=4.5V , RG=3.3, ID=15A	31 ns	-
Turn-off fall time	tf	VDD=10V , VGS=4.5V , RG=3.3, ID=15A	12 ns	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	1.2 V	-
P-Channel Electrical Characteristics
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =-250A	-	-20V	V
Zero gate voltage drain current	IDSS	VDS = -20V,VGS = 0V	-	-1 A
Gate-body leakage current	IGSS	VGS =12V, VDS = 0V	-	100 nA
Gate threshold voltage	VGS(th)	VDS =VGS, ID =-250A	-	-0.5 - -1.0 V
Drain-source on-resistance	RDS(on)	VGS =-4.5V, ID =-10A	-	9 - 11.5 m
Drain-source on-resistance	RDS(on)	VGS =-2.5V, ID =-8A	-	11 - 15 m
Input Capacitance	Ciss	VDS =-10V, VGS =0V, f = 1MHz	-	2872 pF
Output Capacitance	Coss	VDS =-10V, VGS =0V, f = 1MHz	-	332 pF
Reverse Transfer Capacitance	Crss	VDS =-10V, VGS =0V, f = 1MHz	-	274 pF
Turn-on delay time	td(on)	VDD =-10V, RL = 4.7 VGEN =-10V,RGEN = 4.5	-	8 ns
Turn-on rise time	tr	VDD =-10V, RL = 4.7 VGEN =-10V,RGEN = 4.5	-	33 ns
Turn-off delay time	td(off)	VDD =-10V, RL = 4.7 VGEN =-10V,RGEN = 4.5	-	132 ns
Turn-off fall time	tf	VDD =-10V, RL = 4.7 VGEN =-10V,RGEN = 4.5	-	131 ns
Total gate charge	Qg	VDS =-10V, VGS =-4.5V, ID =-8A	-	72.8 nC
Gate-source charge	Qgs	VDS =-10V, VGS =-4.5V, ID =-8A	-	6.7 nC
Gate-drain charge	Qgd	VDS =-10V, VGS =-4.5V, ID =-8A	-	10.3 nC
Body Diode Voltage	VSD	IS=-1A, VGS = 0V	-	-1.2 V
Package Information (PDFN5x6-8L)
Dimension	Symbol	Min.	Max.	Min.	Max.
	A	0.900	1.000	0.035	0.039
	A3	0.254 REF.		0.010 REF.
	D	4.944	5.096	0.195	0.201
	E	5.974	6.126	0.235	0.241
	D1	1.470	1.870	0.058	0.074
	D2	0.470	0.870	0.019	0.034
	E1	3.375	3.575	0.133	0.141
	D3	4.824	4.976	0.190	0.196
	E2	5.674	5.826	0.223	0.229
	k	1.190	1.390	0.047	0.055
	b	0.350	0.450	0.014	0.018
	e	1.270 TYP.		0.050 TYP.
	L	0.559	0.711	0.022	0.028
	L1	0.424	0.576	0.017	0.023
	H	0.574	0.726	0.023	0.029
		10	12	10	12