Low noise broadband RF transistor Slkor BFR380F suitable for VHF UHF oscillators mixers and detectors
Product Overview
The BFR380F is a high-frequency, low-noise, broadband RF silicon bipolar transistor designed for optimal performance in the 30-40mA collector current and 3-5V voltage range. It is suitable for signal amplification in oscillator circuits up to 3.8 GHz, offering approximately 1.1 dB noise at 1.8 GHz. Key features include low leakage current, small junction capacitance, and a wide dynamic range with excellent current linearity. This transistor is manufactured using lead-free (Pb-free, RoHS compliant) SOT323 surface-mount packaging. Its primary applications include TV tuners, satellite TV receivers, CATV video amplifiers, analog and digital cordless phones, radar sensing switches, wireless remote data transmission, wireless communications, RFID scatter systems, and fiber optic amplifiers. It is utilized in VHF/UHF amplifiers, oscillators, mixers, detectors, and for signal amplification in high-frequency microwave signal transmission and reception circuits.
Product Attributes
- Brand: MICROWAVE
- Model: BFR380F
- Packaging: SOT323
- Marking: FCs
- Compliance: Pb-free, RoHS compliant
Technical Specifications
| Parameter Name | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tamb=25) | ||||||
| Collector-Base Breakdown Voltage | BVCBO | 15 | V | |||
| Collector-Emitter Breakdown Voltage | BVCEO | 6 | V | |||
| Emitter-Base Breakdown Voltage | BVEBO | 2 | V | |||
| Collector Current | IC | 80 | mA | |||
| Power Dissipation | PT | 380 | mW | |||
| Maximum Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Electrical Characteristics & Specifications (Tamb=25) | ||||||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=1mA, IB=0 | 6 | 9 | V | |
| Collector-Emitter Cut-off Current | ICES | VCE=4V,VBE=0 | 1 | 30 | nA | |
| Collector-Base Cut-off Current | ICBO | VCB=6V,IE=0 | 100 | nA | ||
| Emitter-Base Cut-off Current | IEBO | VEB=6V,IC=0 | 1 | A | ||
| DC Current Gain | hFE | VCE=3V,IC=40mA | 80 | 100 | 200 | |
| Transition Frequency | fT | VCE=3V,IC=15mA,f=1GHz | 11 | 14 | GHz | |
| Feedback Capacitance | Cre | IC=iC=0,VCB=5V,f=1MHz | 0.2 | pF | ||
| Collector Capacitance | Cc | IE=ie=0,VCB=5V,f=1MHz | 0.47 | 0.7 | pF | |
| Emitter Capacitance | Ce | IC=iC=0,VEB=0.5V,f=1MHz | 1.0 | pF | ||
| Insertion Power Gain | |S21| | VCE=3V,IC=40mA, f=1.8GHz | 11 | dB | ||
| Insertion Power Gain | |S21| | VCE=3V,IC=40mA, f=3.0GHz | 6.5 | dB | ||
| Noise Figure | NF | VCE=3V,IC=8mA,f=1.8GHz | 1.1 | dB | ||
| Maximum Unilateral Power Gain | GUM | VCE=3V,IC=40mA, f=1.8GHz | 13.5 | dB | ||
| Maximum Unilateral Power Gain | GUM | VCE=3V,IC=40mA, f=3.0GHz | 9 | dB | ||
| Output Third Order Intercept Point | IP3 | VCE=3V,IC=40mA, ZS=ZL=50, f=1.8GHz | 29 | dBm | ||
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