General Purpose NPN Transistor Slkor MMBT5551 Medium Power Amplification and Switching Epitaxial Die

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Product Description

Product Overview

The MMBT5551 is an NPN general-purpose transistor featuring epitaxial planar die construction. It is designed for medium power amplification and switching applications. A complementary PNP type (MMBT5401) is available, and a lead-free version is also offered.

Product Attributes

Type: NPN General Purpose Transistor
Construction: Epitaxial planar die
Complementary Type: MMBT5401 (PNP)
Availability: Lead-free version available

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Max.	Unit
MAXIMUM RATING @ Ta=25 unless otherwise specified
VCBO	Collector-base voltage			180	V
VCEO	Collector-emitter voltage			160	V
VEBO	Emitter-base voltage			6	V
IC	Collector current (DC)			0.6	A
PC	Collector dissipation			0.3	W
Tj ,Tstg	Junction and storage temperature		-55	150	C
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
V(BR)CBO	Collector-base breakdown voltage	IC=100A,IE=0	180		V
V(BR)CEO	Collector-emitter breakdown voltage	IC=0.1mA,IB=0	160		V
V(BR)EBO	Emitter-base breakdown voltage	IE=100A,IC=0	6		V
ICBO	Collector cut-off current	IE = 0; VCB = 180V		0.1	A
IEBO	Emitter cut-off current	IC = 0; VEB = 4V		0.1	A
hFE	DC current gain	VCE = 5V; IC = 1mA	80	250
		VCE = 5V;IC = 10mA	80	-
		VCE = 5V;IC = 50 mA	30	-
VCE(sat)	Collector-emitter saturation voltage	IC = 50 mA; IB = 5 mA		0.5	V
VBE(sat)	Base-emitter saturation voltage	IC = 50 mA; IB = 5 mA		1	V
fT	Transition frequency	IC = 10mA; VCE = 10V; f = 100MHz	80	-	MHz