N Channel MOSFET 30 Volt Siliup SP30N06GP8 Featuring Low Gate Charge and Single Pulse Avalanche Test
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Product Description
Product Overview
The SP30N06GP8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP30N06GP8
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on) TYP | RDS(on) | 6 (at 10V), 9.4 (at 4.5V) | m | |||
| ID | ID | 18 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 18 | A | |||
| Continuous Drain Current (Ta=100C) | ID | 12 | A | |||
| Pulse Drain Current Tested | IDM | 72 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 72 | mJ | |||
| Power Dissipation | PD | 3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 41.67 | C/W | |||
| Storage Temperature Range | TJ | -55 to 150 | C | |||
| Operating Junction Temperature Range | TSTG | -55 to 150 | C | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 30 | V | VGS=0V , ID=250uA | ||
| Drain Cut-Off Current | IDSS | - | 1 | uA | VDS=30V , VGS=0V | |
| Gate Leakage Current | IGSS | - | 100 | nA | VGS=20V , VDS=0V | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VGS=VDS , ID =250uA |
| Drain-Source ON Resistance | RDS(ON) | - | 6 | 8 | m | VGS=10V , ID=12A |
| Drain-Source ON Resistance | RDS(ON) | - | 9.4 | 11 | m | VGS=4.5V , ID=12A |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | - | 625 | - | pF | VDS=15V,VGS=0V,f=1MHZ |
| Output Capacitance | Coss | - | 240 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | - | 7.1 | - | nC | VGS=10V,VDS=15V,ID=12A |
| Gate-Source Charge | Qgs | - | 2.2 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.1 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | - | 7 | - | nS | VGS=10V,VDD=15V, ID=12A, RGEN=2 |
| Rise Time | tr | - | 18.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 19.5 | - | nS | |
| Fall Time | tf | - | 3.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | - | - | 1.2 | V | IS =1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | - | - | 18 | A | |
| Reverse Recovery Time | trr | - | - | 11 | nS | IS=15A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | - | - | 18 | nC | |
| Package Information | ||||||
| Package Type | SOP-8L | |||||
| Device Code | 30N06G | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP30N06GP8 | SOP-8L | 4000 | ||||
| SOP-8L Package Dimensions (Millimeters) | ||||||
| Symbol | Dimensions | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
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