High Voltage PNP Silicon Epitaxial Planar Transistor Slkor A1015 Complementary to C1815 Transistor

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Product Description

Product Overview

The A1015 is a PNP Silicon Epitaxial Planar Transistor designed for high voltage and high current applications. It offers excellent hFE linearity and is complementary to the C1815 transistor. This device is suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

Brand: SLKORMICRO
Type: PNP Silicon Epitaxial Planar Transistor
Complementary to: C1815

Technical Specifications

Parameter		Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage		VCBO				-50	V
Collector-Emitter Voltage		VCEO				-50	V
Emitter-Base Voltage		VEBO				-5	V
Collector Current - Continuous		IC				-150	mA
Collector Power Dissipation		PC	(Ta=25)			200	mW
Junction Temperature		TJ				150
Storage Temperature		Tstg		-55		+150
Collector-base breakdown voltage		V(BR)CBO	IC= -100uA, IE=0	-50			V
Collector-emitter breakdown voltage		V(BR)CEO	IC= -0.1mA, IB=0	-50			V
Emitter-base breakdown voltage		V(BR)EBO	IE= -100 uA, IC=0	-5			V
Collector cut-off current		ICBO	VCB=-50V ,IE=0		-0.1	-1	uA
Collector cut-off current		ICEO	VCE= -50V , IB=0		-1	-10	uA
Emitter cut-off current		IEBO	VEB=- 5V, IC=0		-0.1	-1	uA
DC current gain		hFE	VCE=-6V,IC= -2mA	130		400
Collector-emitter saturation voltage		VCE(sat)	IC=-100 mA, IB= -10mA		-0.3	-0.6	V
Base-emitter saturation voltage		VBE(sat)	IC=-100 mA, IB= -10mA		-1.1	-1.2	V
Transition frequency		fT	VCE=-10V,IC= -1mA, f=30MHz		80		MHz
hFE Rank L				130		200
hFE Rank H				200		400
SOT-23 Package Dimensions	Symbol	Dimensions In Millimeters	Dimensions In Inches	Min	Max	Min	Max
	A	0.900	1.150	0.035	0.045
	A1	0.000	0.100	0.000	0.004
	A2	0.900	1.050	0.035	0.041
	b	0.300	0.500	0.012	0.020
	c	0.080	0.150	0.003	0.006
	D	2.800	3.000	0.110	0.118
	E	1.200	1.400	0.047	0.055
	E1	2.250	2.550	0.089	0.100
	e	1.800	2.000	0.071	0.079
	e1	0.300	0.500	0.012	0.020
L	0.550 REF	0.022 REF
	0	8	0	8
Pinout		1. BASE	2. EMITTER	3. COLLECTOR