Siliup SP18N50TQ 500V N Channel Planar MOSFET featuring low gate charge and fast switching for power electronics
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP18N50TQ is a 500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET offers fast switching speeds, low gate charge, and a low RDS(on). It is ideal for applications such as DC-DC converters and is 100% tested for single pulse avalanche energy. The device comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Planar MOSFET
- Model: SP18N50TQ
- Package: TO-220-3L
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 500 | V |
| RDS(on)TYP | - | @10V | - | 0.3 | - | |
| ID | - | - | - | - | 18 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 500 | V |
| Gate-Source Voltage | VGS | - | - | - | 30 | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 18 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 12 | A |
| Pulsed Drain Current | IDM | - | - | - | 72 | A |
| Single Pulse Avalanche Energy | EAS | - | - | - | 845 | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 190 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | - | 0.65 | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 500 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 400V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3 | 4 | 5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 9A | - | 0.3 | 0.4 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 2620 | - | pF |
| Output Capacitance | Coss | - | - | 220 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 6 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 46 | - | nC |
| Gate-Source Charge | Qgs | - | - | 12.5 | - | - |
| Gate-Drain Charge | Qg d | - | - | 15.5 | - | - |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 28 | - | nS |
| Rise Time | tr | - | - | 47 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 57 | - | - |
| Fall Time | tf | - | - | 40 | - | - |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS=1A , VGS=0V , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 18 | A |
| Reverse Recovery Time | Trr | IS=16A, di/dt=100A/us, TJ=25 | - | 445 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 4661 | - | nC |
| Package Information | ||||||
| Package Type | - | - | - | - | TO-220-3L | - |
| Package Dimensions (TO-220-3L) | ||||||
| Symbol | Min (mm) | Max (mm) | Symbol | Min (mm) | Max (mm) | |
| A | 2.700 | 2.900 | N | 1.2 | 1.4 | |
| B | 6.400 | 6.800 | P | 12.7 | 13.3 | |
| C | 0.300 | 0.700 | P1 | 7.6 | 8.2 | |
| D | 11 | 15 | Q | 3.5 | 3.7 | |
| E | 1.1 | 1.5 | - | - | - | |
| F | 0.7 | 0.9 | - | - | - | |
| G | 2.54TYP | - | - | - | - | |
| W | 9.8 | 10.2 | - | - | - | |
| H | 4.3 | 4.7 | - | - | - | |
| H1 | 2.2 | 2.5 | - | - | - | |
| K | 2.7 | 3.1 | - | - | - | |
| L | 14.8 | 16.8 | - | - | - | |
| L1 | 9.0 | 9.4 | - | - | - | |
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