General purpose transistor Slkor 2N2222A NPN silicon type with TO92 package and low leakage current
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Product Description
Product Overview
The 2N2222 is a general-purpose NPN silicon transistor housed in a TO-92 plastic package. It is designed for general amplification applications and features low collector-to-emitter saturation voltage (VCE(sat)) and low leakage current (ICBO), enabling low-voltage operation. This transistor is suitable for a wide range of general-purpose amplification tasks.
Product Attributes
- Package Type: TO-92 Plastic Package
- Transistor Type: NPN Silicon
Technical Specifications
| Parameter Name | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | BVCBO | IC = 100A, IE = 0 | 50 | V | ||
| Collector-Emitter Voltage | BVCEO | IC = 100A, IB = 0 | 40 | V | ||
| Emitter-Base Voltage | BVEBO | IE = 100A, IC = 0 | 5 | V | ||
| Collector-Base Leakage Current | ICBO | VCB = 50V, IE = 0 | 0.1 | A | ||
| Collector-Emitter Leakage Current | ICEO | VCE = 40V, IB = 0 | 0.1 | A | ||
| Emitter-Base Leakage Current | IEBO | VEB = 5V, IC = 0 | 0.1 | A | ||
| DC Current Gain | HFE(1) | VCE = 5V, IB = 1mA | 90 | 250 | 400 | |
| DC Current Gain | HFE(2) | VCE = 5V, IB = 5mA | 90 | 200 | 400 | |
| Collector Saturation Voltage | VCESAT | IC = 500mA, IB = 50mA | 0.6 | V | ||
| Base-Emitter Saturation Voltage | VBESAT | IC = 500mA, IB = 50mA | 1.2 | V | ||
| Transition Frequency | fT | VCE = 10V, IB = 50mA | 100 | MHz | ||
| Collector-Base Voltage | BVCBO | 50 | V | |||
| Collector-Emitter Voltage | BVCEO | 40 | V | |||
| Maximum Collector Current | ICM | 0.6 | A | |||
| Power Dissipation | PCM | 0.625 | W | |||
| Storage Junction Temperature | Tj, Tstg | -55 | +150 |
Pin Configuration:
- PIN 1: Collector
- PIN 2: Base
- PIN 3: Emitter
hFE Classifications & Marking:
hFE(1) classification and printing. Specific content subject to printing. Example marking: 2N 2222 XXXX. The 2N2222A model is also available.
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