P Channel MOSFET Siliup SP2101CT3 20V Device with High Current Capability in Compact SOT 323 Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP2101CT3 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-323 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-323
- Device Code: TS1
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 110 | 140 | m | |
| Continuous Drain Current | ID | -1.2 | A | |||
| Static Drain-Source On-Resistance | RDS(on) | @-2.5V | 140 | 180 | m | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -1.2 | A | |||
| Pulse Drain Current | IDM | Tested | -2.8 | A | ||
| Power Dissipation | PD | 290 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 431 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.5 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 110 | 140 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-500mA | 140 | 180 | m | |
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 485 | pF | ||
| Output Capacitance | Coss | 58 | pF | |||
| Reverse Transfer Capacitance | Crss | 49 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-2.5V , ID=-1.2A | 6.5 | nC | ||
| Gate-Source Charge | Qgs | 0.28 | ||||
| Gate-Drain Charge | Qg d | 0.6 | ||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=6 , ID=-1.2A | 7 | nS | ||
| Turn-On Rise Time | tr | 6 | ||||
| Turn-Off Delay Time | td(off) | 42 | ||||
| Turn-Off Fall Time | tf | 6.5 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-323) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.100 | 0.035 - 0.043 | ||||
| A1 | 0.000 - 0.100 | 0.000 - 0.004 | ||||
| A2 | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| c | 0.080 - 0.150 | 0.003 - 0.006 | ||||
| D | 2.000 - 2.200 | 0.079 - 0.087 | ||||
| E | 1.150 - 1.350 | 0.045 - 0.053 | ||||
| E1 | 2.150 - 2.450 | 0.085 - 0.096 | ||||
| e | 0.650 TYP. | 0.026 TYP. | ||||
| e1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| L | 0.525 REF. | 0.021 REF. | ||||
| L1 | 0.260 - 0.460 | 0.010 - 0.018 | ||||
| 0 - 8 | 0 - 8 | |||||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina