1200V 40A trench field stop IGBT SPTECH IKW40N120H3 suitable for parallel switching in power systems
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Product Description
Product Overview
The IKW40N120H3 is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. Featuring Trench-Stop Technology, it offers high-speed switching, excellent ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics systems. This IGBT is ideal for Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| IGBT Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250A | 1200 | 1300 | - | V |
| Gate threshold voltage | VGE(th) | VGE=VCE, IC=250A | 5.1 | 5.8 | 6.4 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=40A Tj = 25C | - | - | 2.0 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=40A Tj = 150C | - | - | 2.5 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V Tj = 25C | - | - | 10 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V Tj = 150C | - | - | 2500 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=15A | - | 15 | - | S |
| IGBT Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 4400 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 180 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 100 | - | pF |
| Gate charge | QG | VCC = 960V, IC = 40A, VGE = 15V | - | 270 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC10us VCC=600V, Tjstart=25C | - | 240 | - | A |
| IGBT Switching Characteristics (Inductive Load, Tj = 25C) | ||||||
| Turn-on delay time | td(on) | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12 | - | 60 | - | ns |
| Rise time | tr | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12 | - | 27 | - | ns |
| Turn-on energy | Eon | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12 | - | 2.9 | - | mJ |
| Turn-off delay time | td(off) | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12 | - | 230 | - | ns |
| Fall time | tf | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12 | - | 110 | - | ns |
| Turn-off energy | Eoff | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12 | - | 0.8 | - | mJ |
| Diode Electrical Characteristics | ||||||
| Diode Forward Voltage | VFM | IF = 40A | - | 3.5 | - | V |
| Reverse Recovery Time | Trr | IF= 40A, VR = 600V, di/dt= 400A/s | - | 190 | - | ns |
| Reverse Recovery Current | Irr | IF= 40A, VR = 600V, di/dt= 400A/s | - | 6 | - | A |
| Reverse Recovery Charge | Qrr | IF= 40A, VR = 600V, di/dt= 400A/s | - | 530 | - | nC |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | - | - | 1200 | - | V |
| DC collector current, limited by Tjmax | IC | TC = 25C | - | 80 | - | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | - | 40 | - | A |
| Diode Forward current, limited by Tjmax | IF | TC = 25C | - | 80 | - | A |
| Diode Forward current, limited by Tjmax | IF | TC = 100C | - | 40 | - | A |
| Pulsed Collector Current, limited by Tjmax | Icpuls | - | - | 160 | - | A |
| Turn off safe operating area | - | VCE 1200V, Tj 150C | - | - | 160 | A |
| Diode Pulsed Current, limited by Tjmax | IFpuls | - | - | 160 | - | A |
| Short Circuit Withstand Time, VGE= 15V, VCE 600V | Tsc | - | - | 10 | - | s |
| Power dissipation , Tj=25 | Ptot | - | - | 417 | - | W |
| Operating junction temperature | Tj | - | -40 | - | 150 | C |
| Storage temperature | Ts | - | -55 | - | 150 | C |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | - | - | - | 260 | C |
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | - | - | 0.3 | - | K/W |
| Diode thermal resistance, junction - case | R(j-c) | - | - | 0.6 | - | K/W |
| Thermal resistance, junction - ambient | R(j-a) | - | - | 40 | - | K/W |
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