NPN transistor Slkor SS8050W featuring SOT 323 package for electronic circuit amplification and switching

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Product Description

Product Overview

The SS8050W is an NPN transistor designed for general-purpose applications. It offers high collector current capability and is complementary to the SS8550W. This transistor is suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

Brand: SLKOR
Model: SS8050W
Type: NPN Transistor
Complementary to: SS8550W
Package: SOT-323
Marking: Y1

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
V(BR)CBO	Collector-base breakdown voltage	IC= 100A, IE=0	40			V
V(BR)CEO	Collector-emitter breakdown voltage	IC= 0.1mA, IB=0	25			V
V(BR)EBO	Emitter-base breakdown voltage	IE=100A, IC=0	5			V
ICBO	Collector cut-off current	VCB=40V, IE=0			0.1	A
ICEO	Collector cut-off current	VCE=20V, IE=0			0.1	A
IEBO	Emitter cut-off current	VEB= 5V, IC=0			0.1	A
hFE(1)	DC current gain	VCE=1V, IC= 100mA	120		400
hFE(2)	DC current gain	VCE=1V, IC= 800mA			40
VCE(sat)	Collector-emitter saturation voltage	IC=800mA, IB= 80mA			0.5	V
VBE(sat)	Base-emitter saturation voltage	IC=800mA, IB= 80mA			1.2	V
fT	Transition frequency	VCE=10V, IC= 50mA, f=30MHz		100		MHz
Cob	Collector output capacitance	VCB=10V,IE=0,f=1MHz			15	pF

Absolute Maximum Ratings (Ta = 25)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	25	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	1.5	A
PC	Collector Power Dissipation	250	mW
RJA	Thermal Resistance From Junction To Ambient	500	/W
Tj	Junction Temperature	150
Tstg	Storage Temperature	-55+150